发明授权
US07799602B2 Semiconductor device and method of forming a shielding layer over a semiconductor die after forming a build-up interconnect structure
有权
半导体器件以及在形成叠层互连结构之后在半导体管芯上形成屏蔽层的方法
- 专利标题： Semiconductor device and method of forming a shielding layer over a semiconductor die after forming a build-up interconnect structure
- 专利标题（中）： 半导体器件以及在形成叠层互连结构之后在半导体管芯上形成屏蔽层的方法
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申请号： US12332277申请日： 2008-12-10
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公开(公告)号： US07799602B2公开(公告)日： 2010-09-21
- 发明人: Reza A. Pagaila , Rui Huang , Yaojian Lin
- 申请人： Reza A. Pagaila , Rui Huang , Yaojian Lin
- 申请人地址： SG Singapore
- 专利权人： STATS ChipPAC, Ltd.
- 当前专利权人： STATS ChipPAC, Ltd.
- 当前专利权人地址： SG Singapore
- 代理商 Robert D. Atkins
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/48 ; H01L21/50
摘要：
A semiconductor device is made by forming a build-up interconnect structure over a substrate. A semiconductor die is mounted to the build-up interconnect structure. The semiconductor die is electrically connected to the build-up interconnect structure. A ground pad is formed on the build-up interconnect structure. An encapsulant is formed over the semiconductor die and build-up interconnect structure. A shielding cage can be formed over the semiconductor die prior to forming the encapsulant. A shielding layer is formed over the encapsulant after forming the build-up interconnect structure to isolate the semiconductor die from inter-device interference. The shielding layer conforms to a geometry of the encapsulant and electrically connects to the ground pad. The shielding layer can be electrically connected to ground through a conductive pillar. The substrate is removed. A backside interconnect structure is formed over the build-up interconnect structure, opposite the semiconductor die.
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