发明授权
- 专利标题： Nanocrystal non-volatile memory cell and method therefor
- 专利标题（中）： 纳米晶体非挥发性记忆体及其方法
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申请号： US12397849申请日： 2009-03-04
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公开(公告)号： US07800164B2公开(公告)日： 2010-09-21
- 发明人: Ramachandran Muralidhar , Rajesh A. Rao , Michael A. Sadd , Bruce E. White
- 申请人： Ramachandran Muralidhar , Rajesh A. Rao , Michael A. Sadd , Bruce E. White
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 James L. Clingan; Kim-Marie Vo
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A method of forming a semiconductor device includes forming a first dielectric layer over a semiconductor substrate, forming a plurality of discrete storage elements over the first dielectric layer, thermally oxidizing the plurality of discrete storage elements to form a second dielectrics over the plurality of discrete storage elements, and forming a gate electrode over the second dielectric layer, wherein a significant portion of the gate electrode is between pairs of the plurality of discrete storage elements. In one embodiment, portions of the gate electrode is in the spaces between the discrete storage elements and extends to more than half of the depth of the spaces.
公开/授权文献
- US20090166712A1 NANOCRYSTAL NON-VOLATILE MEMORY CELL AND METHOD THEREFOR 公开/授权日：2009-07-02
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