发明授权
US07800192B2 Backside illuminated image sensor having deep light reflective trenches
有权
具有深光反射沟槽的背面照明图像传感器
- 专利标题： Backside illuminated image sensor having deep light reflective trenches
- 专利标题（中）： 具有深光反射沟槽的背面照明图像传感器
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申请号： US12204743申请日： 2008-09-04
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公开(公告)号： US07800192B2公开(公告)日： 2010-09-21
- 发明人: Vincent Venezia , Hsin-Chih Tai , Duli Mao , Sohei Manabe , Howard E. Rhodes , Wei Dong Qian
- 申请人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Sohei Manabe , Howard E. Rhodes , Wei Dong Qian
- 申请人地址： US CA Santa Clara
- 专利权人： OmniVision Technologies, Inc.
- 当前专利权人： OmniVision Technologies, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely Sokoloff Taylor & Zafman LLP
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
An array of pixels is formed using a substrate having a frontside and a backside that is for receiving incident light. Each pixel typically includes metallization layers included in the frontside of the substrate, a photosensitive region formed in the backside of the substrate, and a trench formed around the photosensitive region in the backside of the substrate. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.
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