发明授权
US07800234B2 Process for manufacturing deep through vias in a semiconductor device, and semiconductor device made thereby
有权
用于制造半导体器件中的深通孔的工艺，以及由此制造的半导体器件
- 专利标题： Process for manufacturing deep through vias in a semiconductor device, and semiconductor device made thereby
- 专利标题（中）： 用于制造半导体器件中的深通孔的工艺，以及由此制造的半导体器件
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申请号： US11600687申请日： 2006-11-16
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公开(公告)号： US07800234B2公开(公告)日： 2010-09-21
- 发明人: Mauro Marchi , Marco Ferrera , Caterina Riva
- 申请人： Mauro Marchi , Marco Ferrera , Caterina Riva
- 申请人地址： IT Agrate Brianza
- 专利权人： STMicroelectronics S.r.l.
- 当前专利权人： STMicroelectronics S.r.l.
- 当前专利权人地址： IT Agrate Brianza
- 代理机构： Wolf, Greenfield & Sacks, P.C.
- 代理商 Lisa K. Jorgenson; James H. Morris
- 优先权： EP05425807 20051116
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A process for manufacturing a through via in a semiconductor device includes the steps of: forming a body having a structural layer, a substrate, and a dielectric layer set between the structural layer and the substrate; insulating a portion of the structural layer to form a front-side interconnection region; insulating a portion of the substrate to form a back-side interconnection region; and connecting the front-side interconnection region and the back-side interconnection region through the dielectric layer.