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    Micro-electro-mechanical structure having electrically insulated regions and manufacturing process thereof
    3.
    发明授权
    Micro-electro-mechanical structure having electrically insulated regions and manufacturing process thereof 有权
    具有电绝缘区域的微机电结构及其制造方法

    公开(公告)号：US07437933B2

    公开(公告)日：2008-10-21

    申请号：US11177474

    申请日：2005-07-07

    申请人： Guido Spinola Durante ,  Simone Sassolini ,  Marco Ferrera ,  Mauro Marchi

    发明人： Guido Spinola Durante ,  Simone Sassolini ,  Marco Ferrera ,  Mauro Marchi

    IPC分类号： H01L21/306 ,  H01L23/24 ,  G01P9/04

    CPC分类号： G01C19/5769

    摘要： Micro-electro-mechanical structure formed by a substrate of semiconductor material and a suspended mass extending above the substrate and separated therefrom by an air gap. An insulating region of a first electrically insulating material extends through the suspended mass and divides it into at least one first electrically insulated suspended region and one second electrically insulated suspended region. A plug element of a second electrically insulating material different from the first electrically insulating material is formed underneath the insulating region and constitutes a barrier between the insulating region and the air gap for preventing removal of the insulating region during fabrication, when an etching agent is used for removing a sacrificial layer and forming the air gap.

    摘要翻译： 由半导体材料的基板形成的微机电结构和在基板上方延伸并通过气隙分离的悬浮物。 第一电绝缘材料的绝缘区域延伸穿过悬挂质量并将其分成至少一个第一电绝缘悬浮区域和一个第二电绝缘悬浮区域。 在绝缘区域的下面形成有与第一电绝缘材料不同的第二电绝缘材料的插头元件，并且在使用蚀刻剂时，在绝缘区域和气隙之间形成阻挡层，以防止在制造期间去除绝缘区域 用于去除牺牲层并形成气隙。

    Micro-electro-mechanical structure having electrically insulated regions and manufacturing process thereof
    4.
    发明申请
    Micro-electro-mechanical structure having electrically insulated regions and manufacturing process thereof 有权
    具有电绝缘区域的微机电结构及其制造方法

    公开(公告)号：US20060070441A1

    公开(公告)日：2006-04-06

    申请号：US11177474

    申请日：2005-07-07

    申请人： Guido Durante ,  Simone Sassolini ,  Marco Ferrera ,  Mauro Marchi

    发明人： Guido Durante ,  Simone Sassolini ,  Marco Ferrera ,  Mauro Marchi

    IPC分类号： G01P9/04 ,  G01C19/56 ,  G01C25/00 ,  H01L21/306 ,  H01L23/24

    CPC分类号： G01C19/5769

    摘要： Micro-electro-mechanical structure formed by a substrate of semiconductor material and a suspended mass extending above the substrate and separated therefrom by an air gap. An insulating region of a first electrically insulating material extends through the suspended mass and divides it into at least one first electrically insulated suspended region and one second electrically insulated suspended region. A plug element of a second electrically insulating material different from the first electrically insulating material is formed underneath the insulating region and constitutes a barrier between the insulating region and the air gap for preventing removal of the insulating region during fabrication, when an etching agent is used for removing a sacrificial layer and forming the air gap.

    摘要翻译： 由半导体材料的基板形成的微机电结构和在基板上方延伸并通过气隙分离的悬浮物。 第一电绝缘材料的绝缘区域延伸穿过悬挂质量并将其分成至少一个第一电绝缘悬浮区域和一个第二电绝缘悬浮区域。 在绝缘区域的下方形成有与第一电绝缘材料不同的第二电绝缘材料的插头元件，并且在使用蚀刻剂时，在绝缘区域和气隙之间形成阻挡层，以防止在制造期间去除绝缘区域 用于去除牺牲层并形成气隙。

    PROCESS FOR MANUFACTURING A MEMBRANE MICROELECTROMECHANICAL DEVICE, AND MEMBRANE MICROELECTROMECHANICAL DEVICE
    5.
    发明申请
    PROCESS FOR MANUFACTURING A MEMBRANE MICROELECTROMECHANICAL DEVICE, AND MEMBRANE MICROELECTROMECHANICAL DEVICE 有权
    薄膜微电子设备的制造方法和微电子电化学装置

    公开(公告)号：US20120237061A1

    公开(公告)日：2012-09-20

    申请号：US13419230

    申请日：2012-03-13

    申请人： Pietro Corona ,  Marco Ferrera ,  Igor Varisco ,  Roberto Campedelli

    发明人： Pietro Corona ,  Marco Ferrera ,  Igor Varisco ,  Roberto Campedelli

    IPC分类号： H04R3/00 ,  H01L29/84 ,  H01L21/02

    CPC分类号： B81C1/00158 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00293 ,  B81C2203/0145 ,  G01L9/0042 ,  G01L9/0073

    摘要： Disclosed herein is a microelectromechanical device and a process for manufacturing same. One or more embodiments may include forming a semiconductor structural layer separated from a substrate by a dielectric layer, and opening a plurality of trenches through the structural layer exposing a portion of the dielectric layer. A sacrificial portion of the dielectric layer is selectively removed through the plurality of trenches in membrane regions so as to free a corresponding portion of the structural layer to form a membrane. To close the trenches, the wafer is brought to an annealing temperature for a time interval in such a way as to cause migration of the atoms of the membrane so as to reach a minimum energy configuration.

    摘要翻译： 本文公开了一种微机电装置及其制造方法。 一个或多个实施例可以包括通过电介质层形成与衬底分离的半导体结构层，以及通过暴露电介质层的一部分的结构层来打开多个沟槽。 电介质层的牺牲部分通过膜区域中的多个沟槽选择性地去除，以便释放结构层的相应部分以形成膜。 为了封闭沟槽，将晶片以这样的方式达到退火温度一段时间，使得膜的原子迁移以达到最小的能量构型。

    6-cycloalkyl-pyrazolopyrimidinones for the treatment of CNS disorders
    7.
    发明授权
    6-cycloalkyl-pyrazolopyrimidinones for the treatment of CNS disorders 有权
    6-环烷基 - 吡唑并嘧啶酮用于治疗CNS疾病

    公开(公告)号：US09328120B2

    公开(公告)日：2016-05-03

    申请号：US14511238

    申请日：2014-10-10

    申请人： Niklas Heine ,  Christian Eickmeier ,  Marco Ferrera ,  Riccardo Giovannini ,  Holger Rosenbrock ,  Gerhard Schaenzle

    发明人： Niklas Heine ,  Christian Eickmeier ,  Marco Ferrera ,  Riccardo Giovannini ,  Holger Rosenbrock ,  Gerhard Schaenzle

    IPC分类号： A61K31/519 ,  C07D487/04 ,  A61K45/06 ,  A61P25/28 ,  A61P25/18

    CPC分类号： C07D487/04 ,  A61K31/519 ,  A61K45/06 ,  A61K2300/00

    摘要： The invention relates to novel 6-Cycloalkyl-pyrazolopyrimidinones according to formula (I). wherein R1 is a 5 or 6 membered aromatic heteroaryl-group, R2 is an optional substituent, D is optionally substituted cyclopentyl, cyclohexyl, tetrahydrofuranyl, tetrahydropyranyl or 2-, 3- or 4-pyridyl, m=1 or 2 and n is 0, 1 or 2. The new compounds are for use as the active entity of medicaments or for the manufacture of medicaments respectively, in particular medicaments for the treatment of conditions concerning deficits in perception, concentration, learning or memory. Such conditions may for example be associated with Alzheimer's disease, schizophrenia and other diseases. The new compounds are also for example for the manufacture of medicaments and/or for use in the treatment of these diseases, in particular for cognitive impairment associated with such disease. The compounds of the invention show PDE9 inhibiting properties.

    摘要翻译： 本发明涉及式（I）的新型6-环烷基 - 吡唑并嘧啶酮。 其中R1是5或6元芳族杂芳基，R2是任选的取代基，D是任选取代的环戊基，环己基，四氢呋喃基，四氢吡喃基或2-，3-或4-吡啶基，m = 1或2，n是0 ，1或2.新化合物分别用作药物的活性成分或用于制造药物，特别是用于治疗感知，集中，学习或记忆缺陷的病症的药物。 这种情况可能例如与阿尔茨海默病，精神分裂症和其他疾病相关。 新化合物还例如用于制备药物和/或用于治疗这些疾病，特别是与这种疾病相关的认知障碍。 本发明化合物显示PDE9抑制性质。

    Method for manufacturing integrated structures including removing a sacrificial region
    8.
    发明授权
    Method for manufacturing integrated structures including removing a sacrificial region 有权
    包括去除牺牲区域的集成结构的制造方法

    公开(公告)号：US06395618B2

    公开(公告)日：2002-05-28

    申请号：US09745071

    申请日：2000-12-19

    申请人： Paolo Vergani ,  Ilaria Gelmi ,  Pietro Montanini ,  Marco Ferrera ,  Laura Castoldi

    发明人： Paolo Vergani ,  Ilaria Gelmi ,  Pietro Montanini ,  Marco Ferrera ,  Laura Castoldi

    IPC分类号： H01L2176

    CPC分类号： H01L21/764

    摘要： The method is based on the use of an etching mask comprising silicon carbide or titanium nitride for removing a sacrificial region. In case of manufacture of integrated semiconductor material structures, the following steps are performed: forming a sacrificial region of silicon oxide on a substrate of semiconductor material; growing a pseudo-epitaxial layer; forming electronic circuit components; depositing a masking layer comprising silicon carbide or titanium nitride; defining photolithographically the masking layer so as to form an etching mask containing the topography of a microstructure to be formed; with the etching mask, forming trenches in the pseudo-epitaxial layer as far as the sacrificial region so as to laterally define the microstructure; and removing the sacrificial region through the trenches.

    摘要翻译： 该方法基于使用包含碳化硅或氮化钛的蚀刻掩模来去除牺牲区域。 在制造集成半导体材料结构的情况下，执行以下步骤：在半导体材料的衬底上形成氧化硅牺牲区; 生长伪外延层; 形成电子电路部件; 沉积包含碳化硅或氮化钛的掩模层; 光刻地限定掩模层，以形成包含要形成的微结构的形貌的蚀刻掩模; 利用蚀刻掩模，在伪外延层中形成直到牺牲区域的沟槽，以横向限定微结构; 并通过沟槽去除牺牲区域。

    Production method for integrated angular speed sensor device
    9.
    发明授权
    Production method for integrated angular speed sensor device 有权
    集成角速度传感器装置的生产方法

    公开(公告)号：US06387725B1

    公开(公告)日：2002-05-14

    申请号：US09791965

    申请日：2001-02-22

    申请人： Paolo Ferrari ,  Benedetto Vigna ,  Mario Foroni ,  Marco Ferrera ,  Pietro Montanini

    发明人： Paolo Ferrari ,  Benedetto Vigna ,  Mario Foroni ,  Marco Ferrera ,  Pietro Montanini

    IPC分类号： H01L2100

    CPC分类号： G01C19/574 ,  G01C19/5769 ,  G01P15/0802 ,  H01L21/76202 ,  H01L21/764

    摘要： An angular speed sensor comprises a pair of mobile masses which are formed in an epitaxial layer and are anchored to one another and to the remainder of the device by anchorage elements. The mobile masses are symmetrical with one another, and have first mobile excitation electrodes which are intercalated with respective first fixed excitation electrodes and second mobile detection electrodes which are intercalated with second fixed detection electrodes. The first mobile and fixed excitation electrodes extend in a first direction and the second mobile and fixed detection electrodes extend in a second direction which is perpendicular to the first direction and is disposed on a single plane parallel to the surface of the device.

    摘要翻译： 角速度传感器包括一对移动质量块，其形成在外延层中并且通过锚定元件锚固到装置的其余部分。 移动质量彼此对称，并且具有插入有第一固定激励电极的第一移动激励电极和插入第二固定检测电极的第二移动检测电极。 第一移动和固定激励电极沿第一方向延伸，并且第二移动和固定检测电极在垂直于第一方向的第二方向上延伸并且设置在平行于装置表面的单个平面上。