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US07804019B2 Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices 有权
沉积具有减小的裂纹和/或表面缺陷密度的外延热电薄膜和相关器件的方法

Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices
摘要：
A substrate is provided including a growth surface that is offcut relative to a plane defined by a crystallographic orientation of the substrate at an offcut angle of about 5 degrees to about 45 degrees. A thermoelectric film is epitaxially grown on the growth surface. A crystallographic orientation of the thermoelectric film may be tilted about 5 degrees to about 30 degrees relative to the growth surface. The growth surface of the substrate may also be patterned to define a plurality of mesas protruding therefrom prior to epitaxial growth of the thermoelectric film. Related methods and thermoelectric devices are also discussed.
摘要（中）：

提供了一种基底，其包括生长表面，该生长表面相对于由约5度至约45度的切割角度的基底的结晶定向限定的平面而切除。 在生长表面上外延生长热电膜。 热电膜的晶体取向可相对于生长表面倾斜约5度至约30度。 衬底的生长表面也可以被图案化以在热电膜的外延生长之前限定从其突出的多个台面。 还讨论了相关方法和热电装置。

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