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    Thermoelectric devices including thermoelectric elements having off-set metal pads and related structures, methods, and systems
    1.
    发明授权
    Thermoelectric devices including thermoelectric elements having off-set metal pads and related structures, methods, and systems 有权
    包括具有偏置金属焊盘的热电元件和相关结构，方法和系统的热电装置

    公开(公告)号：US08525016B2

    公开(公告)日：2013-09-03

    申请号：US12731546

    申请日：2010-03-25

    申请人： Philip A. Deane ,  Ramaswamy Mahadevan ,  Edward P. Siivola

    发明人： Philip A. Deane ,  Ramaswamy Mahadevan ,  Edward P. Siivola

    IPC分类号： H01L35/02 ,  H01L37/00

    CPC分类号： H01L35/08 ,  H01L35/32

    摘要： A thermoelectric device may include a thermoelectric element including a layer of a thermoelectric material and having opposing first and second surfaces. A first metal pad may be provided on the first surface of the thermoelectric element, and a second metal pad may be provided on the second surface of the thermoelectric element. In addition, the first and second metal pads may be off-set in a direction parallel with respect to the first and second surfaces of the thermoelectric element. Related methods are also discussed.

    摘要翻译： 热电装置可以包括包括热电材料层并具有相对的第一和第二表面的热电元件。 可以在热电元件的第一表面上设置第一金属焊盘，并且可以在热电元件的第二表面上设置第二金属焊盘。 此外，第一和第二金属焊盘可以在相对于热电元件的第一和第二表面平行的方向上偏移。 还讨论了相关方法。

    Thin film thermoelectric devices having favorable crystal tilt
    3.
    发明授权
    Thin film thermoelectric devices having favorable crystal tilt 有权
    具有良好晶体倾斜的薄膜热电元件

    公开(公告)号：US09190592B2

    公开(公告)日：2015-11-17

    申请号：US13833651

    申请日：2013-03-15

    申请人： Nextreme Thermal Solutions, Inc.

    发明人： Robert P. Vaudo ,  Philip A. Deane ,  Thomas Peter Schneider ,  Christopher D. Holzworth ,  Joseph Robert Williamson

    IPC分类号： H01L35/34 ,  H01L35/04 ,  H01L35/32

    CPC分类号： H01L35/04 ,  H01L35/32 ,  H01L35/34

    摘要： A method of fabricating a thermoelectric device includes providing a substrate having a plurality of inclined growth surfaces protruding from a surface thereof. Respective thermoelectric material layers are grown on the inclined growth surfaces, and the respective thermoelectric material layers coalesce to collectively define a continuous thermoelectric film. A surface of the thermoelectric film opposite the surface of the substrate may be substantially planar, and a crystallographic orientation of the thermoelectric film may be tilted at an angle of about 45 degrees or less relative to a direction along a thickness thereof. Related devices and fabrication methods are also discussed.

    摘要翻译： 一种制造热电装置的方法包括提供具有从其表面突出的多个倾斜生长表面的基板。 相应的热电材料层生长在倾斜的生长表面上，并且各个热电材料层聚结以共同限定连续的热电膜。 与基板的表面相对的热电膜的表面可以是基本上平面的，并且热电膜的结晶取向可以相对于沿其厚度的方向以大约45度或更小的角度倾斜。 还讨论了相关设备和制造方法。

    Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices
    4.
    发明授权
    Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices 有权
    沉积具有减小的裂纹和/或表面缺陷密度的外延热电薄膜和相关器件的方法

    公开(公告)号：US07804019B2

    公开(公告)日：2010-09-28

    申请号：US12024475

    申请日：2008-02-01

    申请人： Jonathan Pierce ,  Robert P. Vaudo

    发明人： Jonathan Pierce ,  Robert P. Vaudo

    IPC分类号： H01L35/28 ,  H01L35/34 ,  H01L37/00

    CPC分类号： H01L35/34 ,  H01L35/32

    摘要： A substrate is provided including a growth surface that is offcut relative to a plane defined by a crystallographic orientation of the substrate at an offcut angle of about 5 degrees to about 45 degrees. A thermoelectric film is epitaxially grown on the growth surface. A crystallographic orientation of the thermoelectric film may be tilted about 5 degrees to about 30 degrees relative to the growth surface. The growth surface of the substrate may also be patterned to define a plurality of mesas protruding therefrom prior to epitaxial growth of the thermoelectric film. Related methods and thermoelectric devices are also discussed.

    摘要翻译： 提供了一种基底，其包括生长表面，该生长表面相对于由约5度至约45度的切割角度的基底的结晶定向限定的平面而切除。 在生长表面上外延生长热电膜。 热电膜的晶体取向可相对于生长表面倾斜约5度至约30度。 衬底的生长表面也可以被图案化以在热电膜的外延生长之前限定从其突出的多个台面。 还讨论了相关方法和热电装置。

    METHODS OF DEPOSITING EPITAXIAL THERMOELECTRIC FILMS HAVING REDUCED CRACK AND/OR SURFACE DEFECT DENSITIES AND RELATED DEVICES
    7.
    发明申请
    METHODS OF DEPOSITING EPITAXIAL THERMOELECTRIC FILMS HAVING REDUCED CRACK AND/OR SURFACE DEFECT DENSITIES AND RELATED DEVICES 有权
    沉积具有减少裂纹和/或表面缺陷密度的外延热电片的方法和相关设备

    公开(公告)号：US20080185030A1

    公开(公告)日：2008-08-07

    申请号：US12024475

    申请日：2008-02-01

    申请人： Jonathan Pierce ,  Robert P. Vaudo

    发明人： Jonathan Pierce ,  Robert P. Vaudo

    IPC分类号： H01L35/28 ,  H01L35/34 ,  H01L37/00

    CPC分类号： H01L35/34 ,  H01L35/32

    摘要： A substrate is provided including a growth surface that is offcut relative to a plane defined by a crystallographic orientation of the substrate at an offcut angle of about 5 degrees to about 45 degrees. A thermoelectric film is epitaxially grown on the growth surface. A crystallographic orientation of the thermoelectric film may be tilted about 5 degrees to about 30 degrees relative to the growth surface. The growth surface of the substrate may also be patterned to define a plurality of mesas protruding therefrom prior to epitaxial growth of the thermoelectric film. Related methods and thermoelectric devices are also discussed.

    摘要翻译： 提供了一种基底，其包括生长表面，该生长表面相对于由约5度至约45度的切割角度的基底的结晶定向限定的平面而切除。 在生长表面上外延生长热电膜。 热电膜的晶体取向可相对于生长表面倾斜约5度至约30度。 衬底的生长表面也可以被图案化以在热电膜的外延生长之前限定从其突出的多个台面。 还讨论了相关方法和热电装置。

    Temperature Control Including Integrated Thermoelectric Temperature Sensing and Related Methods and Systems
    8.
    发明申请
    Temperature Control Including Integrated Thermoelectric Temperature Sensing and Related Methods and Systems 审中-公开
    包括集成热电温度检测及相关方法和系统的温度控制

    公开(公告)号：US20080168775A1

    公开(公告)日：2008-07-17

    申请号：US11972267

    申请日：2008-01-10

    申请人： Jesko von Windheim ,  Seri Lee

    发明人： Jesko von Windheim ,  Seri Lee

    IPC分类号： F25B21/02 ,  H01L35/30

    CPC分类号： F25B21/02 ,  F25B2321/021 ,  H01L23/34 ,  H01L23/38 ,  H01L35/30 ,  H01L2924/0002 ,  H01S5/02415 ,  H01L2924/00

    摘要： A temperature control system may include a thermoelectric device and a controller electrically coupled to the thermoelectric device. The controller may be configured to sense a first value of an electrical characteristic of the thermoelectric device, and to generate a first electrical control signal to pump heat through the thermoelectric device in response to sensing the first value of the electrical characteristic of the thermoelectric device. The controller may be further configured to sense a second value of the electrical characteristic of the thermoelectric device wherein the first and second values of the electrical characteristic are different, and to generate a second electrical control signal to pump heat through the thermoelectric device in response to sensing the second electrical characteristic of the thermoelectric device with the first and second electrical control signals being different. Related methods are also discussed.

    摘要翻译： 温度控制系统可以包括热电装置和电耦合到热电装置的控制器。 控制器可以被配置为感测热电装置的电特性的第一值，并且响应于感测热电装置的电特性的第一值而产生第一电控制信号以泵送通过热电装置的热量。 控制器还可以被配置为感测热电装置的电特性的第二值，其中电特性的第一和第二值不同，并产生第二电控信号以响应于 感测第一和第二电气控制信号不同的热电装置的第二电特性。 还讨论了相关方法。

    Methods of Forming Embedded Thermoelectric Coolers With Adjacent Thermally Conductive Fields and Related Structures
    9.
    发明申请
    Methods of Forming Embedded Thermoelectric Coolers With Adjacent Thermally Conductive Fields and Related Structures 有权
    形成具有相邻导热场和相关结构的嵌入式热电冷却器的方法

    公开(公告)号：US20070089773A1

    公开(公告)日：2007-04-26

    申请号：US11563443

    申请日：2006-11-27

    申请人： David Koester ,  Randall Alley

    发明人： David Koester ,  Randall Alley

    IPC分类号： H01L35/02 ,  H01L35/34

    CPC分类号： H01L35/34

    摘要： A method of forming a thermoelectric device may include providing a substrate having a surface, and thermally coupling a thermoelectric p-n couple to a first portion of the surface of a substrate. Moreover, the thermoelectric p-n couple may include a p-type thermoelectric element and an n-type thermoelectric element. In addition, a thermally conductive field layer may be formed on a second portion of the surface of the substrate adjacent the first portion of the surface of the substrate. Related structures are also discussed.

    摘要翻译： 形成热电装置的方法可以包括提供具有表面的基板，并将热电p-n耦合热耦合到基板的表面的第一部分。 此外，热电p-n耦合可以包括p型热电元件和n型热电元件。 此外，导热场层可以形成在衬底表面的与衬底表面的第一部分相邻的第二部分上。 还讨论了相关结构。

    Methods of forming thermoelectric devices including conductive posts and/or different solder materials and related methods and structures
    10.
    发明授权
    Methods of forming thermoelectric devices including conductive posts and/or different solder materials and related methods and structures 有权
    形成包括导电柱和/或不同焊料材料的热电装置的方法以及相关的方法和结构

    公开(公告)号：US08623687B2

    公开(公告)日：2014-01-07

    申请号：US11472032

    申请日：2006-06-21

    申请人： Brooks O'Quinn ,  Rama Venkatasubramanian ,  Edward Siivola

    发明人： Brooks O'Quinn ,  Rama Venkatasubramanian ,  Edward Siivola

    IPC分类号： H01L21/00 ,  H01L35/34 ,  H01L35/02

    CPC分类号： H01L35/32 ,  H01L35/08 ,  H01L35/34

    摘要： A method of forming a thermoelectric device may include forming a first electrically conductive trace, and bonding a thermoelectric element to the first electrically conductive trace. After bonding the thermoelectric element to the first electrically conductive trace, a metal post may be formed on the thermoelectric element so that the thermoelectric element is between the first electrically conductive trace and the metal post. After forming the metal post, the metal post may be bonded to a second electrically conductive trace so that the metal post is between the second electrically conductive trace and the thermoelectric element. Other related methods and structures are also discussed.

    摘要翻译： 形成热电装置的方法可以包括形成第一导电迹线，以及将热电元件接合到第一导电迹线。 在将热电元件接合到第一导电迹线之后，可以在热电元件上形成金属柱，使得热电元件在第一导电迹线和金属柱之间。 在形成金属柱之后，金属柱可以结合到第二导电迹线，使得金属柱位于第二导电迹线和热电元件之间。 还讨论了其他相关的方法和结构。