Invention Grant
- Patent Title: Insulator for high current ion implanters
- Patent Title (中): 绝缘子用于高电流离子注入机
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Application No.: US11382600Application Date: 2006-05-10
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Publication No.: US07804076B2Publication Date: 2010-09-28
- Inventor: James Huang , Yung-Cheng Kuo , Min-Kung Hsu
- Applicant: James Huang , Yung-Cheng Kuo , Min-Kung Hsu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01J37/317
- IPC: H01J37/317

Abstract:
An insulator usable in high current ion implantation systems includes increased surface due to the configuration of an inner cylinder and an outer cylinder coupled to the inner cylinder at one end. A cylindrical cavity extends between the two cylinders increasing the surface area and making the insulator resistant to being coated by a coating that could produce a leakage path.
Public/Granted literature
- US20070262270A1 INSULATOR FOR HIGH CURRENT ION IMPLANTERS Public/Granted day:2007-11-15
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