发明授权
- 专利标题: Thin film transistor array panel and manufacturing method of the same
- 专利标题(中): 薄膜晶体管阵列及其制造方法相同
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申请号: US12335928申请日: 2008-12-16
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公开(公告)号: US07804093B2公开(公告)日: 2010-09-28
- 发明人: Jang-Soo Kim , Sang-Soo Kim , Shi-Yul Kim , Jang-Sub Kim
- 申请人: Jang-Soo Kim , Sang-Soo Kim , Shi-Yul Kim , Jang-Sub Kim
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Cantor Colburn LLP
- 优先权: KR10-2008-0065548 20080707
- 主分类号: H01L29/04
- IPC分类号: H01L29/04 ; H01L31/036 ; H01L31/0376 ; H01L31/20
摘要:
A thin film transistor array panel includes an insulating substrate, a gate line and a data line disposed on the insulating substrate and insulated from and intersecting each other, a thin film transistor connected to the gate line and the data line, a partition disposed corresponding to the gate line and the data line and defining a color filter filling region, a color filter disposed in the filling region, a passivation layer disposed on the color filter and the partition, and a pixel electrode disposed on the passivation layer and connected to the thin film transistor through a contact hole disposed through the passivation layer and the color filter. A plane shape of the color filter filling region is substantially a rectangle.
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