Thin film transistor array panel and manufacturing method of the same
    1.
    发明授权
    Thin film transistor array panel and manufacturing method of the same 有权
    薄膜晶体管阵列及其制造方法相同

    公开(公告)号:US07804093B2

    公开(公告)日:2010-09-28

    申请号:US12335928

    申请日:2008-12-16

    摘要: A thin film transistor array panel includes an insulating substrate, a gate line and a data line disposed on the insulating substrate and insulated from and intersecting each other, a thin film transistor connected to the gate line and the data line, a partition disposed corresponding to the gate line and the data line and defining a color filter filling region, a color filter disposed in the filling region, a passivation layer disposed on the color filter and the partition, and a pixel electrode disposed on the passivation layer and connected to the thin film transistor through a contact hole disposed through the passivation layer and the color filter. A plane shape of the color filter filling region is substantially a rectangle.

    摘要翻译: 薄膜晶体管阵列面板包括绝缘基板,栅极线和设置在绝缘基板上并彼此绝缘和相交的数据线,连接到栅极线和数据线的薄膜晶体管,对应于 栅极线和数据线,并且限定滤色器填充区域,布置在填充区域中的滤色器,设置在滤色器和隔板上的钝化层,以及设置在钝化层上并连接到薄膜上的像素电极 薄膜晶体管通过设置穿过钝化层和滤色器的接触孔。 滤色器填充区域的平面形状基本上是矩形。

    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME
    3.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号:US20100051951A1

    公开(公告)日:2010-03-04

    申请号:US12414932

    申请日:2009-03-31

    IPC分类号: H01L33/00 H01L21/28

    摘要: A thin film transistor (“TFT”) array panel includes; an insulation substrate, a TFT disposed on the insulation substrate and including a drain electrode, a passivation layer covering the TFT and including a contact portion disposed therein corresponding to the drain electrode, a partition comprising an organic material disposed on the passivation layer, and including a transverse portion, a longitudinal portion, and a contact portion disposed on the drain electrode, a color filter disposed on the passivation layer and disposed in a region defined by the partition, an organic capping layer disposed on the partition and the color filter, and a pixel electrode disposed on the organic capping layer, and connected to the drain electrode through the contact portion of the passivation layer and the contact portion of the partition, wherein a contact hole is formed in the organic capping layer corresponding to the contact portion of the passivation layer.

    摘要翻译: 薄膜晶体管(“TFT”)阵列面板包括: 绝缘基板,设置在所述绝缘基板上并包括漏电极的TFT,覆盖所述TFT的钝化层,并且包括设置在其中的所述漏电极对应的接触部分,所述隔板包括设置在所述钝化层上的有机材料,并且包括 横向部分,纵向部分和设置在漏电极上的接触部分,设置在钝化层上并设置在由隔板限定的区域中的滤色器,设置在隔板上的有机覆盖层和滤色器,以及 设置在所述有机覆盖层上的像素电极,并且通过所述钝化层的接触部分和所述隔离物的接触部分连接到所述漏电极,其中在所述有机覆盖层中形成接触孔,所述接触孔对应于所述钝化层的接触部分 钝化层。

    Thin film transistor array panel and manufacturing method of the same
    4.
    发明授权
    Thin film transistor array panel and manufacturing method of the same 有权
    薄膜晶体管阵列及其制造方法相同

    公开(公告)号:US09046727B2

    公开(公告)日:2015-06-02

    申请号:US12414932

    申请日:2009-03-31

    摘要: A thin film transistor (“TFT”) array panel includes; an insulation substrate, a TFT disposed on the insulation substrate and including a drain electrode, a passivation layer covering the TFT and including a contact portion disposed therein corresponding to the drain electrode, a partition comprising an organic material disposed on the passivation layer, and including a transverse portion, a longitudinal portion, and a contact portion disposed on the drain electrode, a color filter disposed on the passivation layer and disposed in a region defined by the partition, an organic capping layer disposed on the partition and the color filter, and a pixel electrode disposed on the organic capping layer, and connected to the drain electrode through the contact portion of the passivation layer and the contact portion of the partition, wherein a contact hole is formed in the organic capping layer corresponding to the contact portion of the passivation layer.

    摘要翻译: 薄膜晶体管(“TFT”)阵列面板包括: 绝缘基板,设置在所述绝缘基板上并包括漏电极的TFT,覆盖所述TFT的钝化层,并且包括设置在其中的所述漏电极对应的接触部分,所述隔板包括设置在所述钝化层上的有机材料,并且包括 横向部分,纵向部分和设置在漏电极上的接触部分,设置在钝化层上并设置在由隔板限定的区域中的滤色器,设置在隔板上的有机覆盖层和滤色器,以及 设置在所述有机覆盖层上的像素电极,并且通过所述钝化层的接触部分和所述隔离物的接触部分连接到所述漏电极,其中在所述有机覆盖层中形成接触孔,所述接触孔对应于所述钝化层的接触部分 钝化层。

    Panel for display device, manufacturing method thereof and liquid crystal display
    5.
    发明授权
    Panel for display device, manufacturing method thereof and liquid crystal display 有权
    显示装置用面板及其制造方法以及液晶显示装置

    公开(公告)号:US07538850B2

    公开(公告)日:2009-05-26

    申请号:US10752968

    申请日:2004-01-07

    IPC分类号: G02F1/1339

    摘要: A method for forming a display device includes forming a first panel and a second panel. The step of forming a first panel includes forming a black matrix over portions of a first substrate, forming a common electrode over the black matrix, and forming a spacer over the common electrode and the black matrix. The step of forming the second panel includes forming a pixel electrode over a second substrate. The first panel and the second panel are disposed over one another such that the pixel electrode faces the common electrode and the black matrix with a liquid crystal layer therebetween. A vertical distance between the first panel and the second panel is determined by thicknesses of the spacer and the black matrix.

    摘要翻译: 一种形成显示装置的方法包括形成第一面板和第二面板。 形成第一面板的步骤包括在第一衬底的部分上形成黑色矩阵,在黑色矩阵上形成公共电极,以及在公共电极和黑色矩阵上形成间隔物。 形成第二面板的步骤包括在第二衬底上形成像素电极。 第一面板和第二面板彼此配置,使得像素电极面对公共电极和黑色矩阵,其间具有液晶层。 第一面板和第二面板之间的垂直距离由间隔物和黑色矩阵的厚度决定。

    Panel for Display Device, Manufacturing Method Thereof and Liquid Crystal Display
    6.
    发明申请
    Panel for Display Device, Manufacturing Method Thereof and Liquid Crystal Display 审中-公开
    显示设备面板及其制造方法和液晶显示器

    公开(公告)号:US20090225248A1

    公开(公告)日:2009-09-10

    申请号:US12436495

    申请日:2009-05-06

    IPC分类号: G02F1/1368

    摘要: A method for forming a display device includes forming a first panel and a second panel. The step of forming a first panel includes forming a black matrix over portions of a first substrate, forming a common electrode over the black matrix, and forming a spacer over the common electrode and the black matrix. The step of forming the second panel includes forming a pixel electrode over a second substrate. The first panel and the second panel are disposed over one another such that the pixel electrode faces the common electrode and the black matrix with a liquid crystal layer therebetween. A vertical distance between the first panel and the second panel is determined by thicknesses of the spacer and the black matrix.

    摘要翻译: 一种形成显示装置的方法包括形成第一面板和第二面板。 形成第一面板的步骤包括在第一衬底的部分上形成黑色矩阵,在黑色矩阵上形成公共电极,以及在公共电极和黑色矩阵上形成间隔物。 形成第二面板的步骤包括在第二衬底上形成像素电极。 第一面板和第二面板彼此配置,使得像素电极面对公共电极和黑色矩阵,其间具有液晶层。 第一面板和第二面板之间的垂直距离由间隔物和黑色矩阵的厚度决定。

    Thin film transistor substrate and method for manufacturing the same
    8.
    发明授权
    Thin film transistor substrate and method for manufacturing the same 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号:US08598581B2

    公开(公告)日:2013-12-03

    申请号:US12434907

    申请日:2009-05-04

    IPC分类号: H01L33/00

    摘要: A method for manufacturing a thin film transistor array panel includes; forming a gate line including a gate electrode and a height increasing member on a substrate, forming a gate insulating layer on the gate line and the height increasing member, forming a semiconductor, a data line including a source electrode, and a drain electrode facing the source electrode and overlapping at least a portion of the height increasing member on the gate insulating layer, forming a first insulating layer on the gate insulating layer, a data line and the drain electrode, forming a light-blocking member on a portion of the first insulating layer corresponding to the gate line and the data line, forming a color filter in an area bound by the light-blocking member, forming a second insulating layer on the light-blocking member and the color filter, and patterning the second insulating layer, the light-blocking member or the color filter, and the first insulating layer to form a contact hole exposing a portion of the drain electrode aligned with the height increasing member.

    摘要翻译: 薄膜晶体管阵列板的制造方法包括: 在基板上形成包括栅电极和高度增加部件的栅极线,在栅极线和高度增加部件上形成栅绝缘层,形成半导体,包括源电极和漏电极的数据线, 并且在所述栅极绝缘层上与所述高度增加部件的至少一部分重叠,在所述栅极绝缘层上形成第一绝缘层,在所述栅极绝缘层上形成第一绝缘层,在所述栅极绝缘层上形成阻挡部件,在所述第一 对应于栅极线和数据线的绝缘层,在由阻光构件限定的区域中形成滤色器,在遮光构件和滤色器上形成第二绝缘层,并对第二绝缘层进行构图, 遮光构件或滤色器,以及第一绝缘层,以形成暴露与高度增加构件对准的漏电极的一部分的接触孔。