Invention Grant
- Patent Title: System and method for reducing process-induced charging
- Patent Title (中): 减少过程引发充电的系统和方法
-
Application No.: US11782507Application Date: 2007-07-24
-
Publication No.: US07804125B2Publication Date: 2010-09-28
- Inventor: Ashot Melik Martirosian , Zhizheng Liu , Mark Randolph
- Applicant: Ashot Melik Martirosian , Zhizheng Liu , Mark Randolph
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Harrity & Harrity, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor device includes a substrate, a memory cell formed on the substrate, and a contact to the substrate. The contact is formed in an area away from the memory cell and functions to raise the potential of the substrate.
Public/Granted literature
- US20070267686A1 SYSTEM AND METHOD FOR REDUCING PROCESS-INDUCED CHARGING Public/Granted day:2007-11-22
Information query
IPC分类:
