发明授权
- 专利标题: Substrate processing method and substrate processing apparatus
- 专利标题(中): 基板处理方法和基板处理装置
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申请号: US11394337申请日: 2006-03-31
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公开(公告)号: US07806989B2公开(公告)日: 2010-10-05
- 发明人: Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
- 申请人: Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Smith, Gambrell & Russell, LLP
- 优先权: JP2005-183549 20050623; JP2005-380090 20051228
- 主分类号: B08B3/00
- IPC分类号: B08B3/00 ; B08B7/04
摘要:
A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.