公开(公告)号：US08337659B2

公开(公告)日：2012-12-25

申请号：US11578099

申请日：2005-10-12

申请人： Takehiko Orii ,  Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

发明人： Takehiko Orii ,  Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： F26B5/005 ,  H01L21/02052 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6708

摘要： A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.

摘要翻译： 根据本发明的基板处理装置设置有保持基板（W）并使其旋转的旋转卡盘（3）。 处理液体供应系统（11 ...）被设置成将处理液体提供给由旋转卡盘旋转的基板。 设置有一个流体喷嘴（12），其向基体提供具有比处理液体挥发性更高的挥发性的干燥流体;以及惰性气体喷嘴（13），该惰性气体喷嘴向基板供应惰性气体。 设置喷嘴移动机构（15,52 ...），其相对于基板的旋转中心（Po）径向向外移动喷嘴（12,13），同时保持惰性气体喷嘴更靠近基板的旋转中心 衬底比流体喷嘴。

公开(公告)号：US20070017555A1

公开(公告)日：2007-01-25

申请号：US11394337

申请日：2006-03-31

申请人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

发明人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

IPC分类号： C23G1/00 ,  B08B3/00 ,  B08B5/04 ,  B08B7/00

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/024 ,  B08B3/04 ,  H01L21/6708 ,  Y10S134/902

摘要： A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.

摘要翻译： 使用诸如去离子水的工艺液体处理衬底（W）。 然后，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第一流体，形成液膜。 接下来，在晶片（W）旋转的同时，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第二流体。 在该供给动作中，第二流体与基板（W）的供给位置（Sf）从基板（W）的旋转中心（Po）向径向外侧移动。 结果，可以防止在通过使用第一和第二流体干燥基板（W）之后产生颗粒。

公开(公告)号：US07806989B2

公开(公告)日：2010-10-05

申请号：US11394337

申请日：2006-03-31

申请人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

发明人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

IPC分类号： B08B3/00 ,  B08B7/04

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/024 ,  B08B3/04 ,  H01L21/6708 ,  Y10S134/902

摘要： A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.

摘要翻译： 使用诸如去离子水的工艺液体处理衬底（W）。 然后，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第一流体，形成液膜。 接下来，在晶片（W）旋转的同时，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第二流体。 在该供给动作中，第二流体与基板（W）的供给位置（Sf）从基板（W）的旋转中心（Po）向径向外侧移动。 结果，可以防止在通过使用第一和第二流体干燥基板（W）之后产生颗粒。

公开(公告)号：US08137478B2

公开(公告)日：2012-03-20

申请号：US12857973

申请日：2010-08-17

申请人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

发明人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

IPC分类号： B08B7/00 ,  B08B7/04

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/024 ,  B08B3/04 ,  H01L21/6708 ,  Y10S134/902

摘要： A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.

摘要翻译： 使用诸如去离子水的工艺液体处理衬底（W）。 然后，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第一流体，形成液膜。 接下来，在晶片（W）旋转的同时，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第二流体。 在该供给动作中，第二流体与基板（W）的供给位置（Sf）从基板（W）的旋转中心（Po）向径向外侧移动。 结果，可以防止在通过使用第一和第二流体干燥基板（W）之后产生颗粒。

公开(公告)号：US20100307543A1

公开(公告)日：2010-12-09

申请号：US12857973

申请日：2010-08-17

申请人： Kenji SEKIGUCHI ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

发明人： Kenji SEKIGUCHI ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

IPC分类号： B08B3/00

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/024 ,  B08B3/04 ,  H01L21/6708 ,  Y10S134/902

摘要： A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.

摘要翻译： 使用诸如去离子水的工艺液体处理衬底（W）。 然后，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第一流体，形成液膜。 接下来，在晶片（W）旋转的同时，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第二流体。 在该供给动作中，第二流体与基板（W）的供给位置（Sf）从基板（W）的旋转中心（Po）向径向外侧移动。 结果，可以防止在通过使用第一和第二流体干燥基板（W）之后产生颗粒。

公开(公告)号：US20070223342A1

公开(公告)日：2007-09-27

申请号：US11578099

申请日：2005-10-12

申请人： Takehiko Orii ,  Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

发明人： Takehiko Orii ,  Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

IPC分类号： C23F1/00 ,  G11B31/00 ,  H01L21/306

CPC分类号： F26B5/005 ,  H01L21/02052 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6708

摘要： A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.

摘要翻译： 根据本发明的基板处理装置设置有保持基板（W）并使其旋转的旋转卡盘（3）。 处理液体供应系统（11 ...）被设置成将处理液体提供给由旋转卡盘旋转的基板。 设置有一个流体喷嘴（12），其向基体提供具有比处理液体挥发性更高的挥发性的干燥流体;以及惰性气体喷嘴（13），该惰性气体喷嘴向基板供应惰性气体。 设置喷嘴移动机构（15,52 ...），其相对于基板的旋转中心（Po）径向向外移动喷嘴（12,13），同时保持惰性气体喷嘴更靠近基板的旋转中心 衬底比流体喷嘴。

公开(公告)号：US09095953B2

公开(公告)日：2015-08-04

申请号：US13158600

申请日：2011-06-13

申请人： Mitsunori Nakamori ,  Noritaka Uchida ,  Takehiko Orii ,  Takanori Miyazaki ,  Nobuhiko Mouri

发明人： Mitsunori Nakamori ,  Noritaka Uchida ,  Takehiko Orii ,  Takanori Miyazaki ,  Nobuhiko Mouri

IPC分类号： B24B7/22 ,  B24B51/00 ,  B24B37/04

CPC分类号： B24B37/042

摘要： Provided are a rear substrate surface polishing device polishing a rear surface of a substrate, a rear substrate surface polishing system including the rear substrate surface polishing device, a rear substrate surface polishing method used in the rear substrate surface polishing device, and a storage medium for storing a program implemented with the rear substrate surface polishing method. In particular, the rear surface of the substrate is polished by a substrate polishing unit in accordance with information acquired from a prior process performed prior to the polishing process of the rear surface of the substrate at the substrate polishing unit. Further, the substrate polishing unit polishes the substrate with a polishing area determined on the basis of information acquired from a prior process. Furthermore, the polishing is performed by using any one or all of a plurality of substrate polishing units determined on the basis of information acquired from a prior process.

摘要翻译： 提供了研磨基板的背面的背面基板表面研磨装置，具有背面基板表面研磨装置的背面基板表面研磨系统，后方基板表面研磨装置所使用的背面基板表面研磨方法以及用于 存储利用后衬底表面抛光方法实现的程序。 特别地，基板抛光单元根据在基板抛光单元的基板的后表面的抛光处理之前执行的先前处理获得的信息来抛光基板的后表面。 此外，基板抛光单元用基于从先前处理获得的信息确定的抛光区域对基板进行抛光。 此外，通过使用基于从先前方法获取的信息确定的多个基板抛光单元中的任何一个或全部来进行抛光。

公开(公告)号：US20110312247A1

公开(公告)日：2011-12-22

申请号：US13158600

申请日：2011-06-13

申请人： Mitsunori Nakamori ,  Noritaka Uchida ,  Takehiko Orii ,  Takanori Miyazaki ,  Nobuhiko Mouri

发明人： Mitsunori Nakamori ,  Noritaka Uchida ,  Takehiko Orii ,  Takanori Miyazaki ,  Nobuhiko Mouri

IPC分类号： B24B51/00

CPC分类号： B24B37/042

摘要： Provided are a rear substrate surface polishing device polishing a rear surface of a substrate, a rear substrate surface polishing system including the rear substrate surface polishing device, a rear substrate surface polishing method used in the rear substrate surface polishing device, and a storage medium for storing a program implemented with the rear substrate surface polishing method. In particular, the rear surface of the substrate is polished by a substrate polishing unit in accordance with information acquired from a prior process performed prior to the polishing process of the rear surface of the substrate at the substrate polishing unit. Further, the substrate polishing unit polishes the substrate with a polishing area determined on the basis of information acquired from a prior process. Furthermore, the polishing is performed by using any one or all of a plurality of substrate polishing units determined on the basis of information acquired from a prior process.

摘要翻译： 提供了研磨基板的背面的背面基板表面研磨装置，具有背面基板表面研磨装置的背面基板表面研磨系统，后方基板表面研磨装置所使用的背面基板表面研磨方法以及用于 存储利用后衬底表面抛光方法实现的程序。 特别地，基板抛光单元根据在基板抛光单元的基板的后表面的抛光处理之前执行的先前处理获得的信息来抛光基板的后表面。 此外，基板抛光单元用基于从先前处理获得的信息确定的抛光区域对基板进行抛光。 此外，通过使用基于从先前方法获取的信息确定的多个基板抛光单元中的任何一个或全部来进行抛光。

公开(公告)号：US20070074747A1

公开(公告)日：2007-04-05

申请号：US10579423

申请日：2004-12-07

申请人： Takayuki Toshima ,  Tadashi Iino ,  Yusuke Saito ,  Mitsunori Nakamori ,  Noritaka Uchida ,  Takehiko Orii

发明人： Takayuki Toshima ,  Tadashi Iino ,  Yusuke Saito ,  Mitsunori Nakamori ,  Noritaka Uchida ,  Takehiko Orii

IPC分类号： B08B3/00

CPC分类号： G03F7/427 ,  H01L21/31138

摘要： A substrate processing method which removes an ArF resist film from a wafer having the ArF resist film. As an ultraviolet irradiation process is performed on the ArF resist film, and then an ozone gas and water vapor are fed to the ArF resist film, the ArF resist film is altered in a water-soluble state. Thereafter, the ArF resist film is removed from the substrate by feeding pure water to the ArF resist film altered into the water-soluble state.

摘要翻译： 从具有ArF抗蚀剂膜的晶片去除ArF抗蚀剂膜的基板处理方法。 由于在ArF抗蚀剂膜上进行紫外线照射处理，然后向ArF抗蚀剂膜供给臭氧气体和水蒸汽，所以ArF抗蚀剂膜变为水溶性状态。 此后，通过将纯水供给到改变成水溶性状态的ArF抗蚀剂膜，从基板除去ArF抗蚀剂膜。

公开(公告)号：US20060079096A1

公开(公告)日：2006-04-13

申请号：US11244684

申请日：2005-10-05

申请人： Mitsunori Nakamori ,  Tadashi Iino ,  Noritaka Uchida ,  Takehiko Orii

发明人： Mitsunori Nakamori ,  Tadashi Iino ,  Noritaka Uchida ,  Takehiko Orii

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： G03F7/423 ,  G03F7/42 ,  H01L21/31133 ,  H01L21/67051 ,  H01L21/67178

摘要： A substrate processing method for removing a resist film from a substrate having the resist film formed thereon comprises maintaining the inner region of the chamber at a prescribed temperature by putting a substrate in a chamber, denaturing the resist film by supplying ozone and a water vapor in such a manner that ozone is supplied into the chamber while a water vapor is supplied into the chamber at a prescribed flow rate, the amount of ozone relative to the amount of the water vapor being adjusted such that the dew formation within the chamber is prevented, and processing the substrate with a prescribed liquid material so as to remove the denatured resist film from the substrate.

摘要翻译： 一种用于从其上形成有抗蚀剂膜的基板去除抗蚀剂膜的基板处理方法包括通过将基板放置在室中来将室的内部区域保持在规定温度，通过将臭氧和水蒸气供给而使抗蚀剂膜变性 这样一种方式是将臭氧以规定的流量供给到室中，同时将臭氧量相对于水蒸气量调节到室内的露点形成， 并用规定的液体材料处理基板，以从基板上除去变性的抗蚀剂膜。