发明授权
US07807557B2 Method of forming a semiconductor device having a trapping film for charge accumulation
有权
形成具有用于电荷累积的捕获膜的半导体器件的方法
- 专利标题： Method of forming a semiconductor device having a trapping film for charge accumulation
- 专利标题（中）： 形成具有用于电荷累积的捕获膜的半导体器件的方法
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申请号： US11806887申请日： 2007-06-05
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公开(公告)号： US07807557B2公开(公告)日： 2010-10-05
- 发明人: Koji Yoshida , Masataka Kusumi , Hiroaki Kuriyama , Fumihiko Noro , Nobuyoshi Takahashi
- 申请人： Koji Yoshida , Masataka Kusumi , Hiroaki Kuriyama , Fumihiko Noro , Nobuyoshi Takahashi
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2006-229673 20060825
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A semiconductor device includes: source/drain regions formed in a semiconductor substrate; a trapping film for storing information by accumulating charges, the trapping film being formed in a region on the semiconductor substrate which includes a region on a channel region between the source/drain regions; and gate electrodes formed on the trapping film. A silicon nitride film containing carbon is formed by low pressure CVD using an organic material so as to cover the gate electrodes and a part of the trapping film which is located between adjacent gate electrodes.
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