发明授权
- 专利标题： Method of forming bit line of flash memory device
- 专利标题（中）： 形成闪存器件位线的方法
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申请号： US11439527申请日： 2006-05-22
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公开(公告)号： US07807565B2公开(公告)日： 2010-10-05
- 发明人: Woo Yung Jung , Tae Kyung Kim , Eun Soo Kim
- 申请人： Woo Yung Jung , Tae Kyung Kim , Eun Soo Kim
- 申请人地址： KR Icheon-si
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Icheon-si
- 代理机构： Townsend and Townsend and Crew LLP
- 优先权： KR10-2005-0043250 20050523
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L23/12
摘要：
A method for forming a semiconductor device includes forming drain contact holes in a first interlayer insulating layer provided over a semiconductor substrate. First metal material is formed over the first interlayer insulating layer and fills the drain contact holes. A first metal layer formed by patterning the first metal material includes first lines and landing pads. Trenches formed in a second interlayer insulating layer formed over the patterned first metal material expose the landing pads. A second metal layer is formed by providing second metal material over the second interlayer insulating layer and filling the trenches. The second metal layer includes second lines within the trenches that contact the landing pads. The first and second metal layers define a first metal level of the semiconductor device. The first lines define odd-number lines of the first metal level, and the second lines define even-number lines of the first metal level.
公开/授权文献
- US20060270212A1 Method of forming bit line of flash memory device 公开/授权日：2006-11-30
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