发明授权
- 专利标题: Semiconductor light emitting devices including in-plane light emitting layers
- 专利标题(中): 包括平面内发光层的半导体发光器件
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申请号: US10805424申请日: 2004-03-19
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公开(公告)号: US07808011B2公开(公告)日: 2010-10-05
- 发明人: James C. Kim , John E. Epler , Nathan F. Gardner , Michael R. Krames , Jonathan J. Wierer, Jr.
- 申请人: James C. Kim , John E. Epler , Nathan F. Gardner , Michael R. Krames , Jonathan J. Wierer, Jr.
- 申请人地址: NL Eindhoven US CA San Jose
- 专利权人: Koninklijke Philips Electronics N.V.,Philips Lumileds Lights Co., LLC
- 当前专利权人: Koninklijke Philips Electronics N.V.,Philips Lumileds Lights Co., LLC
- 当前专利权人地址: NL Eindhoven US CA San Jose
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.