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公开(公告)号：US09142726B2
公开(公告)日：2015-09-22
申请号：US13540913
申请日：2012-07-03
CPC分类号： H01L33/405 , H01L33/0075 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/26 , H01L33/32 , H01L2933/0016
摘要： Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.
摘要翻译： 结构被结合到半导体发光器件中，这可以增加以扫描入射角发射的光的提取。 在一些实施例中，该装置包括低折射率材料，其通过全内反射将光引导离开金属触点。 在一些实施例中，该装置包括提取特征，例如半导体结构中的空腔，其可以直接提取扫帚角度的光，或者将扫帚角光引导到更容易从装置中提取的入射角。
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公开(公告)号：US20110241056A1
公开(公告)日：2011-10-06
申请号：US13161541
申请日：2011-06-16
CPC分类号： H01L33/405 , H01L33/0075 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/26 , H01L33/32 , H01L2933/0016
摘要： Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.
摘要翻译： 结构被结合到半导体发光器件中，这可以增加以扫描入射角发射的光的提取。 在一些实施例中，该装置包括低折射率材料，其通过全内反射将光引导离开金属触点。 在一些实施例中，该装置包括提取特征，例如半导体结构中的空腔，其可以直接提取扫帚角度的光，或者将扫帚角光引导到更容易从装置中提取的入射角。
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公开(公告)号：US20110193059A1
公开(公告)日：2011-08-11
申请号：US13084679
申请日：2011-04-12
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L33/0025 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/16 , H01L33/24 , H01L33/32 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown over a porous III-nitride region. A III-nitride layer comprising InN is disposed between the light emitting layer and the porous III-nitride region. Since the III-nitride layer comprising InN is grown on the porous region, the III-nitride layer comprising InN may be at least partially relaxed, i.e. the III-nitride layer comprising InN may have an in-plane lattice constant larger than an in-plane lattice constant of a conventional GaN layer grown on sapphire.
摘要翻译： 包含在n型区域和p型区域之间的III族氮化物发光层的半导体结构在多孔III族氮化物区域上生长。 包含InN的III族氮化物层设置在发光层和多孔III族氮化物区域之间。 由于包含InN的III族氮化物层在多孔区域上生长，所以包含InN的III族氮化物层可以至少部分松弛，即包含InN的III族氮化物层的面内晶格常数可以大于InN- 在蓝宝石上生长的常规GaN层的平面晶格常数。
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4.发明授权Light emitting device including arrayed emitters defined by a photonic crystal 有权发光器件包括由光子晶体限定的阵列发光体公开(公告)号：US07697584B2
公开(公告)日：2010-04-13
申请号：US11537940
申请日：2006-10-02
IPC分类号： H01S5/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/145 , H01L33/405 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A light emitting device includes a structure with a light emitting region disposed between an n-type region and a p-type region. A plurality of holes in the structure, which form a photonic crystal, are formed in a first region of the structure corresponding to a first portion of the light emitting region. A second region of the structure corresponding to a second portion of the light emitting region is free of holes. The device is configured such that when forward biased, current is injected in the second region and the first region is substantially free of current.
摘要翻译： 发光器件包括具有设置在n型区域和p型区域之间的发光区域的结构。 形成光子晶体的结构中的多个孔形成在与发光区域的第一部分对应的结构的第一区域中。 与发光区域的第二部分对应的结构的第二区域没有孔。 该器件被配置为使得当正向偏置时，电流注入第二区域，而第一区域基本上没有电流。
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5.发明授权Method of removing the growth substrate of a semiconductor light emitting device 有权去除半导体发光器件的生长衬底的方法公开(公告)号：US07754507B2
公开(公告)日：2010-07-13
申请号：US11149679
申请日：2005-06-09
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L24/97 , H01L33/382 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/12041 , H01L2924/12042 , H01L2224/81 , H01L2924/00 , H01L2224/0401
摘要： A semiconductor structure formed on a growth substrate and including a light emitting layer disposed between an n-type region and a p-type region is attached to a carrier by a connection that supports the semiconductor structure sufficiently to permit removal of the growth substrate. In some embodiments, the semiconductor structure is a flip chip device. The semiconductor structure may be attached to the carrier by, for example, a metal bond that supports almost the entire lateral extent of the semiconductor structure, or by interconnects such as solder or gold stud bumps. An underfill material which supports the semiconductor structure is introduced in any spaces between the interconnects. The underfill material may be a liquid that is cured to form a rigid structure. The growth substrate may then be removed without causing damage to the semiconductor structure.
摘要翻译： 在生长衬底上形成的包括设置在n型区域和p型区域之间的发光层的半导体结构通过足以支持半导体结构以允许去除生长衬底的连接而附着到载体上。 在一些实施例中，半导体结构是倒装芯片器件。 半导体结构可以通过例如支撑几乎整个半导体结构的整个横向范围的金属接合，或者通过诸如焊料或金柱凸起的互连来附接到载体。 支撑半导体结构的底部填充材料被引入互连之间的任何空间。 底部填充材料可以是固化以形成刚性结构的液体。 然后可以去除生长衬底而不会对半导体结构造成损害。
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公开(公告)号：US07442965B2
公开(公告)日：2008-10-28
申请号：US11373636
申请日：2006-03-09
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
摘要翻译： 在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。 在与有源区相对的p型区域的表面上形成反射体。 在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的类型区域中形成光子晶体，并且有利于形成 在光子晶体下面的p型区域的表面上的反射器。 光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。
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公开(公告)号：US09385265B2
公开(公告)日：2016-07-05
申请号：US13084679
申请日：2011-04-12
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L33/0025 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/16 , H01L33/24 , H01L33/32 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown over a porous III-nitride region. A III-nitride layer comprising InN is disposed between the light emitting layer and the porous III-nitride region. Since the III-nitride layer comprising InN is grown on the porous region, the III-nitride layer comprising InN may be at least partially relaxed, i.e. the III-nitride layer comprising InN may have an in-plane lattice constant larger than an in-plane lattice constant of a conventional GaN layer grown on sapphire.
摘要翻译： 包含在n型区域和p型区域之间的III族氮化物发光层的半导体结构在多孔III族氮化物区域上生长。 包含InN的III族氮化物层设置在发光层和多孔III族氮化物区域之间。 由于包含InN的III族氮化物层在多孔区域上生长，所以包含InN的III族氮化物层可以至少部分松弛，即包含InN的III族氮化物层的面内晶格常数可以大于InN- 在蓝宝石上生长的常规GaN层的平面晶格常数。
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8.发明申请公开(公告)号：US20120074448A1
公开(公告)日：2012-03-29
申请号：US13309887
申请日：2011-12-02
申请人： Jonathan J. Wierer, JR. , SERGE BIERHUIZEN , AURELIEN J.F. DAVID , MICHAEL R. KRAMES , RICHARD J. WEISS
发明人： Jonathan J. Wierer, JR. , SERGE BIERHUIZEN , AURELIEN J.F. DAVID , MICHAEL R. KRAMES , RICHARD J. WEISS
IPC分类号： H01L33/42
CPC分类号： H01L33/505 , B82Y20/00 , C04B35/44 , C04B35/547 , C04B35/584 , C04B35/597 , C04B35/6268 , C04B35/64 , C04B35/645 , C04B2235/3213 , C04B2235/3224 , C04B2235/3225 , C04B2235/3286 , C04B2235/6027 , C04B2235/662 , C09K11/7774 , H01L33/007 , H01L33/0079 , H01L33/105 , H01L33/20 , H01L33/405 , H01L33/501 , H01L33/58 , H01L33/60 , H01L33/644 , H01L2924/0002 , H01L2933/0083 , H01S5/105 , H01S5/34333 , H01L2924/00
摘要： A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region and a photonic crystal formed within or on a surface of the semiconductor structure is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor.
摘要翻译： 包括设置在n型区域和p型区域之间的发光层和形成在半导体结构的表面内或表面上的光子晶体的半导体结构与设置在发射光的路径中的陶瓷层组合 通过发光层。 陶瓷层由磷光体等波长转换材料构成或包含波长转换材料。
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公开(公告)号：US07804100B2
公开(公告)日：2010-09-28
申请号：US11080022
申请日：2005-03-14
IPC分类号： H01L27/15
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01S5/0213 , H01S5/0215 , H01S5/0217 , H01S5/02208 , H01S5/3202 , H01S5/32341 , H01S2304/00
摘要： A device structure includes a III-nitride wurtzite semiconductor light emitting region disposed between a p-type region and an n-type region. A bonded interface is disposed between two surfaces, one of the surfaces being a surface of the device structure. The bonded interface facilitates an orientation of the wurtzite c-axis in the light emitting region that confines carriers in the light emitting region, potentially increasing efficiency at high current density.
摘要翻译： 器件结构包括设置在p型区域和n型区域之间的III族氮化物纤锌矿半导体发光区域。 键合界面设置在两个表面之间，其中一个表面是器件结构的表面。 结合界面有利于限制发光区域中的载流子的发光区域中的纤锌矿c轴的取向，在高电流密度下潜在地提高效率。
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公开(公告)号：US07675084B2
公开(公告)日：2010-03-09
申请号：US12259120
申请日：2008-10-27
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an n-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
摘要翻译： 在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。 在与有源区相对的p型区域的表面上形成反射体。 在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的n型区域中形成光子晶体，并且有助于形成 在光子晶体下面的p型区域的表面上的反射器。 光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。
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