发明授权
US07811747B2 Method of patterning an anti-reflective coating by partial developing
有权
通过部分显影图案化抗反射涂层的方法
- 专利标题: Method of patterning an anti-reflective coating by partial developing
- 专利标题(中): 通过部分显影图案化抗反射涂层的方法
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申请号: US11534477申请日: 2006-09-22
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公开(公告)号: US07811747B2公开(公告)日: 2010-10-12
- 发明人: Sandra L. Hyland , Shannon W. Dunn
- 申请人: Sandra L. Hyland , Shannon W. Dunn
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Wood, Herron & Evans, LLP
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
A method of patterning a thin film is described. The method comprises forming a thin film to be patterned on a substrate, forming a developable anti-reflective coating (ARC) layer on the thin film, and forming a mask layer on the developable ARC layer. Thereafter, the mask layer is patterned to form a pattern therein, and the pattern is partially transferred to the developable ARC layer using an imaging and developing process. Once the mask layer is removed, the pattern is completely transferred to the developable ARC layer using an etching process, and the pattern in the developable ARC layer is transferred to the underlying thin film using another etching process.