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公开(公告)号:US07883835B2
公开(公告)日:2011-02-08
申请号:US11534538
申请日:2006-09-22
申请人: Sandra L. Hyland , Shannon W. Dunn
发明人: Sandra L. Hyland , Shannon W. Dunn
IPC分类号: H01L21/312
CPC分类号: H01L21/0276
摘要: A method of double patterning a thin film is described. The method comprises forming a thin film to be patterned on a substrate, forming an anti-reflective coating (ARC) layer on the thin film, and forming a mask layer on the ARC layer. Thereafter, the mask layer is patterned to form a first pattern and a second pattern therein, and the first and second patterns are partially transferred to the ARC layer using a transfer process, such as an etching process or a developing process. Once the mask layer is removed, the first pattern and second patterns are completely transferred to the ARC layer using an etching process, and the first and second patterns in the ARC layer are transferred to the underlying thin film using another etching process.
摘要翻译: 描述了薄膜双重图案化的方法。 该方法包括在衬底上形成待图案化的薄膜,在薄膜上形成抗反射涂层(ARC)层,并在ARC层上形成掩模层。 此后,将掩模层图案化以在其中形成第一图案和第二图案,并且使用诸如蚀刻工艺或显影工艺的转印工艺将第一图案和第二图案部分转印到ARC层。 一旦去除了掩模层,则使用蚀刻工艺将第一图案和第二图案完全转印到ARC层,并且使用另一蚀刻工艺将ARC层中的第一和第二图案转移到下面的薄膜。
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2.
公开(公告)号:US07811747B2
公开(公告)日:2010-10-12
申请号:US11534477
申请日:2006-09-22
申请人: Sandra L. Hyland , Shannon W. Dunn
发明人: Sandra L. Hyland , Shannon W. Dunn
IPC分类号: G03F7/20
摘要: A method of patterning a thin film is described. The method comprises forming a thin film to be patterned on a substrate, forming a developable anti-reflective coating (ARC) layer on the thin film, and forming a mask layer on the developable ARC layer. Thereafter, the mask layer is patterned to form a pattern therein, and the pattern is partially transferred to the developable ARC layer using an imaging and developing process. Once the mask layer is removed, the pattern is completely transferred to the developable ARC layer using an etching process, and the pattern in the developable ARC layer is transferred to the underlying thin film using another etching process.
摘要翻译: 描述图案化薄膜的方法。 该方法包括在衬底上形成待图案化的薄膜,在薄膜上形成可显影的抗反射涂层(ARC)层,并在可显影ARC层上形成掩模层。 此后,将掩模层图案化以在其中形成图案,并且使用成像和显影工艺将图案部分地转印到可显影ARC层。 一旦去除了掩模层,使用蚀刻工艺将图案完全转移到可显影ARC层,并且使用另一蚀刻工艺将可显影ARC层中的图案转印到下面的薄膜上。
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公开(公告)号:US20080076075A1
公开(公告)日:2008-03-27
申请号:US11534538
申请日:2006-09-22
申请人: Sandra L. Hyland , Shannon W. Dunn
发明人: Sandra L. Hyland , Shannon W. Dunn
IPC分类号: G03F7/26
CPC分类号: H01L21/0276
摘要: A method of double patterning a thin film is described. The method comprises forming a thin film to be patterned on a substrate, forming an anti-reflective coating (ARC) layer on the thin film, and forming a mask layer on the ARC layer. Thereafter, the mask layer is patterned to form a first pattern and a second pattern therein, and the first and second patterns are partially transferred to the ARC layer using a transfer process, such as an etching process or a developing process. Once the mask layer is removed, the first pattern and second patterns are completely transferred to the ARC layer using an etching process, and the first and second patterns in the ARC layer are transferred to the underlying thin film using another etching process.
摘要翻译: 描述了薄膜双重图案化的方法。 该方法包括在衬底上形成待图案化的薄膜,在薄膜上形成抗反射涂层(ARC)层,并在ARC层上形成掩模层。 此后,将掩模层图案化以在其中形成第一图案和第二图案,并且使用诸如蚀刻工艺或显影工艺的转印工艺将第一图案和第二图案部分转印到ARC层。 一旦去除了掩模层,则使用蚀刻工艺将第一图案和第二图案完全转印到ARC层,并且使用另一蚀刻工艺将ARC层中的第一和第二图案转移到下面的薄膜。
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4.
公开(公告)号:US20080076069A1
公开(公告)日:2008-03-27
申请号:US11534477
申请日:2006-09-22
申请人: Sandra L. Hyland , Shannon W. Dunn
发明人: Sandra L. Hyland , Shannon W. Dunn
IPC分类号: G03C5/00
摘要: A method of patterning a thin film is described. The method comprises forming a thin film to be patterned on a substrate, forming a developable anti-reflective coating (ARC) layer on the thin film, and forming a mask layer on the developable ARC layer. Thereafter, the mask layer is patterned to form a pattern therein, and the pattern is partially transferred to the developable ARC layer using an imaging and developing process. Once the mask layer is removed, the pattern is completely transferred to the developable ARC layer using an etching process, and the pattern in the developable ARC layer is transferred to the underlying thin film using another etching process.
摘要翻译: 描述图案化薄膜的方法。 该方法包括在衬底上形成待图案化的薄膜,在薄膜上形成可显影的抗反射涂层(ARC)层,并在可显影ARC层上形成掩模层。 此后,将掩模层图案化以在其中形成图案,并且使用成像和显影工艺将图案部分地转印到可显影ARC层。 一旦去除了掩模层,使用蚀刻工艺将图案完全转移到可显影ARC层,并且使用另一蚀刻工艺将可显影ARC层中的图案转印到下面的薄膜上。
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5.
公开(公告)号:US20080073321A1
公开(公告)日:2008-03-27
申请号:US11534420
申请日:2006-09-22
申请人: Sandra L. Hyland , Shannon W. Dunn
发明人: Sandra L. Hyland , Shannon W. Dunn
IPC分类号: C23F1/00
CPC分类号: H01L21/31144 , H01L21/0276
摘要: A method of patterning a thin film is described. The method comprises forming a thin film to be patterned on a substrate, forming an anti-reflective coating (ARC) layer on the thin film, and forming a mask layer on the ARC layer. Thereafter, the mask layer is patterned to form a pattern therein, and the pattern is partially transferred to the ARC layer using a transfer process, such as an etching process. Once the mask layer is removed, the pattern is completely transferred to the ARC layer using an etching process, and the pattern in the ARC layer is transferred to the underlying thin film using another etching process.
摘要翻译: 描述图案化薄膜的方法。 该方法包括在衬底上形成待图案化的薄膜,在薄膜上形成抗反射涂层(ARC)层,并在ARC层上形成掩模层。 此后,将掩模层图案化以在其中形成图案,并且使用诸如蚀刻工艺的转印工艺将图案部分转印到ARC层。 一旦去除了掩模层,使用蚀刻工艺将图案完全转移到ARC层,并且使用另一蚀刻工艺将ARC层中的图案转移到下面的薄膜。
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