发明授权
- 专利标题: Method for manufacturing pixel structure
- 专利标题(中): 像素结构制造方法
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申请号: US12617712申请日: 2009-11-12
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公开(公告)号: US07811867B2公开(公告)日: 2010-10-12
- 发明人: Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Kuo-Lung Fang
- 申请人: Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Kuo-Lung Fang
- 申请人地址: TW Hsinchu
- 专利权人: Au Optronics Corporation
- 当前专利权人: Au Optronics Corporation
- 当前专利权人地址: TW Hsinchu
- 代理机构: Jianq Chyun IP Office
- 优先权: TW97124271A 20080627
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method for manufacturing a pixel structure is provided. A gate and a gate insulating layer are sequentially formed on a substrate. A semiconductor layer and a second metal layer are sequentially formed on the gate insulating layer. The semiconductor layer and the second metal layer are patterned to form a channel layer, a source and a drain by using a patterned photoresist layer formed thereon, wherein the source and drain are disposed on a portion of the channel layer. The gate, channel, source and drain form a thin film transistor. A passivation layer is formed on the patterned photoresist layer, the gate insulating layer and the thin film transistor. Then, the patterned photoresist layer is removed, such that the passivation layer thereon is removed simultaneously to form a patterned passivation layer and the drain is exposed. A pixel electrode is formed on the patterned passivation layer and the drain.
公开/授权文献
- US20100055853A1 METHOD FOR MANUFACTURING PIXEL STRUCTURE 公开/授权日:2010-03-04
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