发明授权
- 专利标题： Non-linear conductor memory
- 专利标题（中）： 非线性导体存储器
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申请号： US11926778申请日： 2007-10-29
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公开(公告)号： US07813157B2公开(公告)日： 2010-10-12
- 发明人: Daniel R. Shepard
- 申请人： Daniel R. Shepard
- 申请人地址： US MA N. Billerica
- 专利权人： Contour Semiconductor, Inc.
- 当前专利权人： Contour Semiconductor, Inc.
- 当前专利权人地址： US MA N. Billerica
- 代理机构： Goodwin Procter LLP
- 主分类号： G11C17/06
- IPC分类号： G11C17/06 ; G11C11/00 ; G11C17/18
摘要：
A high-speed, low-power memory device comprises an array of non-linear conductors wherein the storage, address decoding, and output detection are all accomplished with diodes or other non-linear conductors. In various embodiments, the row and column resistors are switchable between a high resistance when connected to a row or column that is non-selected, and a low resistance when connected to the selected row and column.
公开/授权文献
- US20090109726A1 NON-LINEAR CONDUCTOR MEMORY 公开/授权日：2009-04-30
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