发明授权
- 专利标题： Multi-bit flash memory device and program method thereof
- 专利标题（中）： 多位闪存器件及其编程方法
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申请号： US11938603申请日： 2007-11-12
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公开(公告)号： US07813187B2公开(公告)日： 2010-10-12
- 发明人: Seung-Jae Lee
- 申请人： Seung-Jae Lee
- 申请人地址： KR Suwon-Si, Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-Si, Gyeonggi-Do
- 代理机构： F. Chau & Associates, LLC
- 优先权： KR10-2006-0125728 20061211
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
A method for programming a flash memory device including a plurality of memory cells, each storing multi-bit data, includes reading data from selected memory cells. An error of the read data is detected and corrected. Input program data is programmed into the selected memory cells based upon the error-corrected read data.
公开/授权文献
- US20080137415A1 Multi-Bit Flash Memory Device and Program Method Thereof 公开/授权日：2008-06-12
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