Invention Grant
- Patent Title: Lithography masks for improved line-end patterning
- Patent Title (中): 光刻面具
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Application No.: US11820420Application Date: 2007-06-19
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Publication No.: US07816061B2Publication Date: 2010-10-19
- Inventor: Richard Schenker , Swaminathan Sivakumar , Paul Nyhus , Sven Henrichs
- Applicant: Richard Schenker , Swaminathan Sivakumar , Paul Nyhus , Sven Henrichs
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Caven & Aghevli LLC
- Main IPC: G03F1/00
- IPC: G03F1/00 ; H01L21/00
Abstract:
In one embodiment, a mask for use in semiconductor processing comprises a first region formed from a first material that is primarily opaque, a second region formed from a second material that is primarily transmissive, and a third region in which at least a portion of the second material is removed to generate a phase shift in radiation applied to the mask.
Public/Granted literature
- US20080318137A1 Lithography masks for improved line-end patterning Public/Granted day:2008-12-25
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