发明授权
- 专利标题： Methods for simultaneously forming doped regions having different conductivity-determining type element profiles
- 专利标题（中）： 同时形成具有不同导电率确定型元素分布的掺杂区的方法
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申请号： US12344748申请日： 2008-12-29
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公开(公告)号： US07820532B2公开(公告)日： 2010-10-26
- 发明人: Roger Yu-Kwan Leung , Nicole Rutherford , Anil Bhanap
- 申请人： Roger Yu-Kwan Leung , Nicole Rutherford , Anil Bhanap
- 申请人地址： US NJ Morristown
- 专利权人： Honeywell International Inc.
- 当前专利权人： Honeywell International Inc.
- 当前专利权人地址： US NJ Morristown
- 代理机构： Ingrassia, Fisher & Lorenz, P.C.
- 主分类号： H01L21/04
- IPC分类号： H01L21/04
摘要：
Method for simultaneously forming doped regions having different conductivity-determining type elements profiles are provided. In one exemplary embodiment, a method comprises the steps of diffusing first conductivity-determining type elements into a first region of a semiconductor material from a first dopant to form a doped first region. Second conductivity-determining type elements are simultaneously diffused into a second region of the semiconductor material from a second dopant to form a doped second region. The first conductivity-determining type elements are of the same conductivity-determining type as the second conductivity-determining type elements. The doped first region has a dopant profile that is different from a dopant profile of the doped second region.