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    BORON-COMPRISING INKS FOR FORMING BORON-DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES USING NON-CONTACT PRINTING PROCESSES AND METHODS FOR FABRICATING SUCH BORON-COMPRISING INKS
    1.
    发明申请
    BORON-COMPRISING INKS FOR FORMING BORON-DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES USING NON-CONTACT PRINTING PROCESSES AND METHODS FOR FABRICATING SUCH BORON-COMPRISING INKS 失效
    使用非接触式印刷工艺在半导体基板中形成硼掺杂区域的包含墨水的方法和用于制造这种含硼的墨水的方法

    公开(公告)号：US20100162920A1

    公开(公告)日：2010-07-01

    申请号：US12344745

    申请日：2008-12-29

    申请人： Roger Yu-Kwan Leung ,  De-Ling Zhou ,  Wenya Fan

    发明人： Roger Yu-Kwan Leung ,  De-Ling Zhou ,  Wenya Fan

    IPC分类号： C09D11/00 ,  C08L83/04 ,  C08L85/04

    CPC分类号： C09D11/30 ,  C08G77/20 ,  C08G77/46 ,  C09D11/38 ,  C09D11/52 ,  H01L21/2225

    摘要： Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks are provided. A boron-comprising ink comprises boron from or of a boron-comprising material and a spread-minimizing additive that results in a spreading factor of the boron-comprising ink in a range of from about 1.5 to about 6. The boron-comprising ink has a viscosity in a range of from about 1.5 to about 50 centipoise and, when deposited on a semiconductor substrate, provides a post-anneal sheet resistance in a range of from about 10 to about 100 ohms/square, a post-anneal doping depth in a range of from about 0.1 to about 1 μm, and a boron concentration in a range of from about 1×1019 to 1×1020 atoms/cm3.

    摘要翻译： 提供了用于使用非接触印刷方法在半导体衬底中形成硼掺杂区域的含硼油墨以及用于制造这种含硼油墨的方法。 含硼油墨包括来自含硼材料的硼或扩散最小化添加剂，其导致含硼油墨在约1.5至约6的范围内的铺展因子。含硼油墨具有 粘度在约1.5至约50厘泊的范围内，并且当沉积在半导体衬底上时，提供在约10至约100欧姆/平方的范围内的退火后电阻值，后退火掺杂深度 约0.1至约1μm的范围，硼浓度在约1×1019至1×1020原子/ cm3的范围内。

    Low dielectric foam dielectric formed from polymer decomposition
    2.
    发明授权
    Low dielectric foam dielectric formed from polymer decomposition 有权
    低介电泡沫电介质由聚合物分解形成

    公开(公告)号：US06413882B1

    公开(公告)日：2002-07-02

    申请号：US09291511

    申请日：1999-04-14

    申请人： Roger Yu-Kwan Leung ,  Suzanne Case

    发明人： Roger Yu-Kwan Leung ,  Suzanne Case

    IPC分类号： H01L2131

    CPC分类号： H01L21/02137 ,  C09D183/04 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31695

    摘要： The present invention relates to novel low dielectric constant nanoporous dielectric films having improved mechanical strength, and to improved processes for producing the same on substrates suitable for use in the production of integrated circuits. The nanoporous dielectric films are prepared by a process of preparing a mixture of a spin-on-glass material with a suitable thermally degradable polymer that is soluble in nonpolar solvents. Applying the resulting mixture onto a substrate suitable for use in the production of an integrated circuit, to produce a coated substrate. The coated substrate is then heated for a time and at one or more temperatures effective to remove the thermally degradable polymer, so as to produce the desired low dielectric nanoporous dielectric film.

    摘要翻译： 本发明涉及具有改进的机械强度的新颖的低介电常数纳米孔隙介电膜，以及用于在适用于集成电路生产中的基板上制造该介电薄膜的方法。 纳米多孔介电膜通过制备旋涂玻璃材料与可溶于非极性溶剂的合适的可热降解聚合物的混合物的方法制备。 将所得混合物施加到适合用于制造集成电路的基板上，以制造涂覆的基板。 然后将涂覆的基材加热一段时间并在一个或多个温度下有效去除可热降解的聚合物，以便产生所需的低介电纳米多孔介电膜。

    Methods for simultaneously forming doped regions having different conductivity-determining type element profiles
    5.
    发明授权
    Methods for simultaneously forming doped regions having different conductivity-determining type element profiles 失效
    同时形成具有不同导电率确定型元素分布的掺杂区的方法

    公开(公告)号：US07820532B2

    公开(公告)日：2010-10-26

    申请号：US12344748

    申请日：2008-12-29

    申请人： Roger Yu-Kwan Leung ,  Nicole Rutherford ,  Anil Bhanap

    发明人： Roger Yu-Kwan Leung ,  Nicole Rutherford ,  Anil Bhanap

    IPC分类号： H01L21/04

    CPC分类号： H01L21/2255 ,  H01L21/2225 ,  H01L31/022441 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Method for simultaneously forming doped regions having different conductivity-determining type elements profiles are provided. In one exemplary embodiment, a method comprises the steps of diffusing first conductivity-determining type elements into a first region of a semiconductor material from a first dopant to form a doped first region. Second conductivity-determining type elements are simultaneously diffused into a second region of the semiconductor material from a second dopant to form a doped second region. The first conductivity-determining type elements are of the same conductivity-determining type as the second conductivity-determining type elements. The doped first region has a dopant profile that is different from a dopant profile of the doped second region.

    摘要翻译： 提供了同时形成具有不同导电率确定型元件轮廓的掺杂区域的方法。 在一个示例性实施例中，一种方法包括以下步骤：将第一导电率确定型元件从第一掺杂剂扩散到半导体材料的第一区域中以形成掺杂的第一区域。 第二导电率确定型元件同时从第二掺杂剂扩散到半导体材料的第二区域中以形成掺杂的第二区域。 第一导电率确定型元件具有与第二导电率确定型元件相同的导电率确定类型。 掺杂的第一区域具有与掺杂的第二区域的掺杂物分布不同的掺杂剂分布。

    METHODS FOR FORMING DOPED REGIONS IN A SEMICONDUCTOR MATERIAL
    6.
    发明申请
    METHODS FOR FORMING DOPED REGIONS IN A SEMICONDUCTOR MATERIAL 审中-公开
    在半导体材料中形成掺杂区域的方法

    公开(公告)号：US20100035422A1

    公开(公告)日：2010-02-11

    申请号：US12186999

    申请日：2008-08-06

    申请人： Roger Yu-Kwan Leung ,  De-Ling Zhou ,  Wenya Fan

    发明人： Roger Yu-Kwan Leung ,  De-Ling Zhou ,  Wenya Fan

    IPC分类号： H01L21/22

    CPC分类号： H01L21/228 ,  H01L31/0288 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Methods for forming doped regions in a semiconductor material that minimize or eliminate vapor diffusion of a dopant element and/or dopant from a deposited dopant and/or into a semiconductor material and methods for fabricating semiconductor devices that minimize or eliminate vapor diffusion of a dopant element and/or dopant from a deposited dopant and/or into a semiconductor material are provided. In one exemplary embodiment, a method for forming doped regions in a semiconductor material comprises depositing a conductivity-determining type dopant comprising a dopant element overlying a first portion of the semiconductor material. A diffusion barrier material is applied such that it overlies a second portion of the semiconductor material. The dopant element of the conductivity-determining type dopant is diffused into the first portion of the semiconductor material.

    摘要翻译： 在掺杂剂元素和/或掺杂剂从沉积的掺杂剂和/或半导体材料中最小化或消除蒸汽扩散的半导体材料中形成掺杂区域的方法以及用于制造半导体器件的方法，该半导体器件最小化或消除掺杂元素的蒸气扩散 和/或来自沉积的掺杂剂和/或半导体材料的掺杂剂。 在一个示例性实施例中，用于在半导体材料中形成掺杂区域的方法包括沉积包含覆盖半导体材料的第一部分的掺杂剂元素的导电率确定型掺杂剂。 施加扩散阻挡材料，使其覆盖半导体材料的第二部分。 导电性确定型掺杂剂的掺杂剂元素扩散到半导体材料的第一部分。

    Low dielectric constant porous films
    7.
    发明授权
    Low dielectric constant porous films 失效
    低介电常数多孔膜

    公开(公告)号：US06204202B1

    公开(公告)日：2001-03-20

    申请号：US09291510

    申请日：1999-04-14

    申请人： Roger Yu-Kwan Leung ,  Suzanne Case

    发明人： Roger Yu-Kwan Leung ,  Suzanne Case

    IPC分类号： H01L2131

    CPC分类号： H01L21/02126 ,  C09D183/04 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

    摘要： The present invention relates to novel low dielectric constant nanoporous dielectric films having improved mechanical strength, and to improved processes for producing the same on substrates suitable for use in the production of integrated circuits. The nanoporous dielectric films are prepared by a process of preparing a mixture of a spin-on-glass material with a suitable thermally degradable polymer that is soluble in polar solvents. The resulting mixture is then applied onto a substrate suitable for use in the production of an integrated circuit, to produce a coated substrate that is heated for a time and at one or more temperatures effective to degrade the polymer, so as to produce the desired low dielectric nanoporous dielectric film.

    摘要翻译： 本发明涉及具有改进的机械强度的新颖的低介电常数纳米孔隙介电膜，以及用于在适用于集成电路生产中的基板上制造该介电薄膜的方法。 纳米多孔介电膜通过制备旋涂玻璃材料与可溶于极性溶剂的合适的可热降解聚合物的混合物的方法制备。 然后将所得混合物施加到适合用于生产集成电路的基板上，以产生被加热一段时间并且在一个或多个温度下有效降解聚合物的涂覆基底，从而产生所需的低 介电纳米多孔介电膜。

    Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
    8.
    发明授权
    Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks 失效
    含硼的油墨，用于使用非接触印刷方法在半导体基板中形成硼掺杂区域以及制造这种含硼油墨的方法

    公开(公告)号：US08518170B2

    公开(公告)日：2013-08-27

    申请号：US12344745

    申请日：2008-12-29

    申请人： Roger Yu-Kwan Leung ,  De-Ling Zhou ,  Wenya Fan

    发明人： Roger Yu-Kwan Leung ,  De-Ling Zhou ,  Wenya Fan

    IPC分类号： C09D11/02

    CPC分类号： C09D11/30 ,  C08G77/20 ,  C08G77/46 ,  C09D11/38 ,  C09D11/52 ,  H01L21/2225

    摘要： Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks are provided. A boron-comprising ink comprises boron from or of a boron-comprising material and a spread-minimizing additive that results in a spreading factor of the boron-comprising ink in a range of from about 1.5 to about 6. The boron-comprising ink has a viscosity in a range of from about 1.5 to about 50 centipoise and, when deposited on a semiconductor substrate, provides a post-anneal sheet resistance in a range of from about 10 to about 100 ohms/square, a post-anneal doping depth in a range of from about 0.1 to about 1 μm, and a boron concentration in a range of from about 1×1019 to 1×1020 atoms/cm3.

    摘要翻译： 提供了用于使用非接触印刷方法在半导体衬底中形成硼掺杂区域的含硼油墨以及用于制造这种含硼油墨的方法。 含硼油墨包括来自含硼材料的硼或扩散最小化添加剂，其导致含硼油墨在约1.5至约6的范围内的铺展因子。含硼油墨具有 粘度在约1.5至约50厘泊的范围内，并且当沉积在半导体衬底上时，提供在约10至约100欧姆/平方的范围内的退火后电阻值，后退火掺杂深度 约0.1〜1μm的范围，硼浓度为1×1019〜1×1020原子/ cm3左右​​。

    Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
    9.
    发明授权
    Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions 有权
    用于在半导体衬底中形成掺杂区的组合物，用于制备这种组合物的方法，以及使用这种组合物形成掺杂区的方法

    公开(公告)号：US08324089B2

    公开(公告)日：2012-12-04

    申请号：US12839924

    申请日：2010-07-20

    申请人： Roger Yu-Kwan Leung ,  Wenya Fan ,  Jan Nedbal

    发明人： Roger Yu-Kwan Leung ,  Wenya Fan ,  Jan Nedbal

    IPC分类号： H01L21/385

    CPC分类号： H01L21/2255 ,  H01L21/2225

    摘要： Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions are provided. In one embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a moisture adsorption-minimizing component. In another embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a high boiling point material selected from the group consisting of glycol ethers, alcohols, and combinations thereof. The high boiling point material has a boiling point of at least about 150° C.

    摘要翻译： 提供了用于在半导体衬底中形成掺杂区的组合物，用于制备这种组合物的方法，以及使用这种组合物形成掺杂区的方法。 在一个实施方案中，包含掺杂剂的组合物包含电导率确定型杂质掺杂剂，硅酸盐载体，溶剂和水分吸附最小化组分。 在另一个实施方案中，含掺杂剂的组合物包含导电性确定型杂质掺杂剂，硅酸盐载体，溶剂和选自二醇醚，醇及其组合的高沸点材料。 高沸点材料的沸点至少为约150℃

    Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
    10.
    发明授权
    Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes 失效
    使用非接触印刷方法同时形成N型和P型掺杂区的方法

    公开(公告)号：US07951696B2

    公开(公告)日：2011-05-31

    申请号：US12241396

    申请日：2008-09-30

    申请人： Roger Yu-Kwan Leung ,  Anil Bhanap ,  Zhe Ding ,  Nicole Rutherford ,  Wenya Fan

    发明人： Roger Yu-Kwan Leung ,  Anil Bhanap ,  Zhe Ding ,  Nicole Rutherford ,  Wenya Fan

    IPC分类号： H01L21/22

    CPC分类号： H01L21/228 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Methods for simultaneously forming doped regions of opposite conductivity using non-contact printing processes are provided. In one exemplary embodiment, a method comprises the steps of depositing a first liquid dopant comprising first conductivity-determining type dopant elements overlying a first region of a semiconductor material and depositing a second liquid dopant comprising second conductivity-determining type dopant elements overlying a second region of the semiconductor material. The first conductivity-determining type dopant elements and the second conductivity-determining type dopant elements are of opposite conductivity. At least a portion of the first conductivity-determining type dopant elements and at least a portion of the second conductivity-determining type dopant elements are simultaneously diffused into the first region and into the second region, respectively.

    摘要翻译： 提供了使用非接触印刷方法同时形成具有相反导电性的掺杂区域的方法。 在一个示例性实施例中，一种方法包括以下步骤：沉积第一液体掺杂剂，该第一液体掺杂剂包括覆盖在半导体材料的第一区域上的第一导电率确定型掺杂元素，并沉积包含第二区域的第二导电率确定型掺杂元素的第二液体掺杂剂 的半导体材料。 第一导电率确定型掺杂元素和第二导电率确定型掺杂元素具有相反的导电性。 第一导电率确定型掺杂剂元素的至少一部分和第二导电率确定型掺杂元素的至少一部分分别同时扩散到第一区域和第二区域中。