发明授权
US07821044B2 Transistor with improved tip profile and method of manufacture thereof 有权
具有改进尖端轮廓的晶体管及其制造方法

Transistor with improved tip profile and method of manufacture thereof
摘要:
Embodiments are an improved transistor structure and the method of fabricating the structure. In particular, a wet etch of an embodiment forms source and drain regions with an improved tip shape to improve the performance of the transistor by improving control of short channel effects, increasing the saturation current, improving control of the metallurgical gate length, increasing carrier mobility, and decreasing contact resistance at the interface between the source and drain and the silicide.
信息查询
0/0