发明授权
- 专利标题: Deposition processes for titanium nitride barrier and aluminum
- 专利标题(中): 氮化钛屏障和铝的沉积工艺
-
申请号: US11864100申请日: 2007-09-28
-
公开(公告)号: US07824743B2公开(公告)日: 2010-11-02
- 发明人: Wei Ti Lee , Yen-Chih Wang , Mohd Fadzli Anwar Hassan , Ryeun Kwan Kim , Hyung Chul Park , Ted Guo , Alan A. Ritchie
- 申请人: Wei Ti Lee , Yen-Chih Wang , Mohd Fadzli Anwar Hassan , Ryeun Kwan Kim , Hyung Chul Park , Ted Guo , Alan A. Ritchie
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Patterson & Sheridan, LLP
- 主分类号: B05D5/12
- IPC分类号: B05D5/12 ; H01L21/04 ; H01L21/203 ; H05H1/24
摘要:
Embodiments described herein provide a method for forming two titanium nitride materials by different PVD processes, such that a metallic titanium nitride layer is initially formed by a PVD process in a metallic mode and a titanium nitride retarding layer is formed over a portion of the metallic titanium nitride layer by a PVD process in a poison mode. Subsequently, a first aluminum layer, such as an aluminum seed layer, may be selectively deposited on exposed portions of the metallic titanium nitride layer by a CVD process. Thereafter, a second aluminum layer, such as an aluminum bulk layer, may be deposited on exposed portions of the first aluminum layer and the titanium nitride retarding layer during an aluminum PVD process.
公开/授权文献
信息查询