发明授权
- 专利标题: Fabrication method of semiconductor device
- 专利标题(中): 半导体器件的制造方法
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申请号: US12436647申请日: 2009-05-06
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公开(公告)号: US07824932B2公开(公告)日: 2010-11-02
- 发明人: Hideharu Kobashi , Hiroshi Maki , Masayuki Mochizuki , Yoshiaki Makita
- 申请人: Hideharu Kobashi , Hiroshi Maki , Masayuki Mochizuki , Yoshiaki Makita
- 申请人地址: JP Kawasaki-shi
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2006-241559 20060906
- 主分类号: H01L21/66
- IPC分类号: H01L21/66
摘要:
A technique is provided which can exactly recognize a chip to be picked up when picking up the chip from a wafer sheet in a process of die bonding a thin chip. A camera is coupled to one end of a lens barrel, an objective lens is attached to an opposite end of the lens barrel, and an image of a main surface of a chip is photographed through the objective lens. A surface-emitting lighting unit, a diffusing plate and a half mirror are internally provided between the lens barrel and the chip. Further, another lens barrel having a coaxial drop lighting function of radiating light to the main surface of the chip along the same optical axis as that of the camera is disposed.
公开/授权文献
- US20090215204A1 FABRICATION METHOD OF SEMICONDUCTOR DEVICE 公开/授权日:2009-08-27
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