发明授权
US07824948B2 Method and structure for reducing cross-talk in image sensor devices 有权
减少图像传感器设备串扰的方法和结构

Method and structure for reducing cross-talk in image sensor devices
摘要:
Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.
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