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    METHOD AND STRUCTURE FOR REDUCING CROSS-TALK IN IMAGE SENSOR DEVICES
    1.
    发明申请
    METHOD AND STRUCTURE FOR REDUCING CROSS-TALK IN IMAGE SENSOR DEVICES 有权
    用于减少图像传感器装置中的交叉的方法和结构

    公开(公告)号：US20100181635A1

    公开(公告)日：2010-07-22

    申请号：US12405454

    申请日：2009-03-17

    申请人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

    发明人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

    IPC分类号： H01L31/04 ,  H01L31/18

    CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

    摘要： Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

    摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的半导体衬底，在半导体衬底的前侧形成第一隔离结构，从背面减薄半导体衬底，并在第二隔离结构的背面形成第二隔离结构 半导体衬底。 第一和第二隔离结构相对于彼此移位。

    Method and structure for reducing cross-talk in image sensor devices
    2.
    发明授权
    Method and structure for reducing cross-talk in image sensor devices 有权
    减少图像传感器设备串扰的方法和结构

    公开(公告)号：US07923279B2

    公开(公告)日：2011-04-12

    申请号：US12405454

    申请日：2009-03-17

    申请人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

    发明人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

    摘要： Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

    摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的半导体衬底，在半导体衬底的前侧形成第一隔离结构，从背面减薄半导体衬底，并在第二隔离结构的背面形成第二隔离结构 半导体衬底。 第一和第二隔离结构相对于彼此移位。

    APPARATUS AND METHOD FOR REDUCING OPTICAL CROSS-TALK IN IMAGE SENSORS
    5.
    发明申请
    APPARATUS AND METHOD FOR REDUCING OPTICAL CROSS-TALK IN IMAGE SENSORS 审中-公开
    用于减少图像传感器中的光学交叉的装置和方法

    公开(公告)号：US20090020838A1

    公开(公告)日：2009-01-22

    申请号：US11779122

    申请日：2007-07-17

    申请人： Chin-Min Lin ,  Dun-Nian Yaung ,  Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Chun-Ming Su

    发明人： Chin-Min Lin ,  Dun-Nian Yaung ,  Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Chun-Ming Su

    IPC分类号： H01L31/0232 ,  H01L21/00

    CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H04N9/045

    摘要： An image sensor device includes a semiconductor substrate having a front surface and a back surface; an array of pixels formed on the front surface of the semiconductor substrate, each pixel being adapted for sensing light radiation; an array of color filters formed over the plurality of pixels, each color filter being adapted for allowing a wavelength of light radiation to reach at least one of the plurality of pixels; and an array of micro-lens formed over the array of color filters, each micro-lens being adapted for directing light radiation to at least one of the color filters in the array. The array of color filters includes structure adapted for blocking light radiation that is traveling towards a region between adjacent micro-lens.

    摘要翻译： 图像传感器装置包括具有前表面和后表面的半导体衬底; 形成在所述半导体衬底的前表面上的像素阵列，每个像素适于感测光辐射; 形成在所述多个像素上的滤色器阵列，每个滤色器适于允许光辐射的波长到达所述多个像素中的至少一个像素; 以及形成在滤色器阵列上的微透镜阵列，每个微透镜适于将光辐射引导到阵列中的至少一个滤色器。 滤色器阵列包括适于阻挡朝向相邻微透镜之间的区域传播的光辐射的结构。

    Backside depletion for backside illuminated image sensors
    6.
    发明授权
    Backside depletion for backside illuminated image sensors 有权
    背面照明图像传感器的背面耗尽

    公开(公告)号：US08436443B2

    公开(公告)日：2013-05-07

    申请号：US12107199

    申请日：2008-04-22

    申请人： Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Ching-Chun Wang

    发明人： Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Ching-Chun Wang

    IPC分类号： H01L27/146 ,  H01L31/09

    CPC分类号： H01L31/0232 ,  H01L27/14603 ,  H01L27/1464 ,  H01L27/14683

    摘要： A backside illuminated image sensor is provided which includes a substrate having a front side and a backside, a sensor formed in the substrate at the front side, the sensor including at least a photodiode, and a depletion region formed in the substrate at the backside, a depth of the depletion region is less than 20% of a thickness of the substrate.

    摘要翻译： 提供了背面照明图像传感器，其包括具有前侧和后侧的基板，形成在前侧的基板中的传感器，所述传感器至少包括光电二极管，以及在背面形成在基板中的耗尽区域， 耗尽区的深度小于衬底厚度的20％。

    BACKSIDE DEPLETION FOR BACKSIDE ILLUMINATED IMAGE SENSORS
    7.
    发明申请
    BACKSIDE DEPLETION FOR BACKSIDE ILLUMINATED IMAGE SENSORS 有权
    背面照明图像传感器的背面

    公开(公告)号：US20080224247A1

    公开(公告)日：2008-09-18

    申请号：US12107199

    申请日：2008-04-22

    申请人： Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Ching-Chun Wang

    发明人： Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Ching-Chun Wang

    IPC分类号： H01L31/0232 ,  H01L31/18

    CPC分类号： H01L31/0232 ,  H01L27/14603 ,  H01L27/1464 ,  H01L27/14683

    摘要： A backside illuminated image sensor is provided which includes a substrate having a front side and a backside, a sensor formed in the substrate at the front side, the sensor including at least a photodiode, and a depletion region formed in the substrate at the backside, a depth of the depletion region is less than 20% of a thickness of the substrate.

    摘要翻译： 提供了背面照明图像传感器，其包括具有前侧和后侧的基板，形成在前侧的基板中的传感器，所述传感器至少包括光电二极管，以及在背面形成在基板中的耗尽区域， 耗尽区的深度小于衬底厚度的20％。

    Image sensor element for backside-illuminated sensor
    9.
    发明授权
    Image sensor element for backside-illuminated sensor 有权
    用于背面照明传感器的图像传感器元件

    公开(公告)号：US08324002B2

    公开(公告)日：2012-12-04

    申请号：US13206228

    申请日：2011-08-09

    申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

    发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/14625 ,  H01L27/14603 ,  H01L27/1464

    摘要： Provided is a method of forming and/or using a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A transfer transistor and a photodetector are formed on the front surface. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. Radiation incident the back surface and tratversing the photodetector may be reflected by the optically reflective layer. The reflected radiation may be sensed by the photodetector.

    摘要翻译： 提供一种形成和/或使用背面照射传感器的方法，该传感器包括具有前表面和后表面的半导体衬底。 传输晶体管和光电检测器形成在前表面上。 转移晶体管的栅极包括光反射层。 包括光反射层的传输晶体管的栅极覆盖在光电检测器上。 入射到背面的光线和扫描光电检测器的辐射可以被光反射层反射。 可以由光电检测器感测反射的辐射。

    METHOD TO OPTIMIZE SUBSTRATE THICKNESS FOR IMAGE SENSOR DEVICE
    10.
    发明申请
    METHOD TO OPTIMIZE SUBSTRATE THICKNESS FOR IMAGE SENSOR DEVICE 有权
    用于优化图像传感器器件的衬底厚度的方法

    公开(公告)号：US20100207230A1

    公开(公告)日：2010-08-19

    申请号：US12371146

    申请日：2009-02-13

    申请人： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

    发明人： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

    IPC分类号： H01L31/0352 ,  H01L21/76 ,  H01L21/66

    CPC分类号： H01L27/14689 ,  H01L21/26513 ,  H01L27/1463

    摘要： Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

    摘要翻译： 提供一种制造图像传感器装置的方法，该图像传感器装置包括提供具有正面和背面的基板; 在衬底的前侧上形成光致抗蚀剂以限定具有第一宽度的开口，光致抗蚀剂具有与第一宽度相关的第一厚度; 通过使用与第一厚度相关的注入能量通过开口执行注入工艺，从而形成第一掺杂隔离特征; 形成与所述第一掺杂隔离特征相邻的光感测特征，所述光感测特征具有第二宽度; 以及从背面使衬底变薄，使得衬底具有不超过第一掺杂隔离特征深度的两倍的第二厚度。 像素尺寸基本上等于第一和第二宽度。