Invention Grant
- Patent Title: Bipolar transistor with high dynamic performances
- Patent Title (中): 具有高动态性能的双极晶体管
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Application No.: US11516067Application Date: 2006-09-06
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Publication No.: US07824978B2Publication Date: 2010-11-02
- Inventor: Alain Chantre , Bertrand Martinet , Michel Marty , Pascal Chevalier
- Applicant: Alain Chantre , Bertrand Martinet , Michel Marty , Pascal Chevalier
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Montrouge
- Agency: Wolf, Greenfield & Sacks, P.C.
- Agent Lisa K. Jorgenson; James H. Morris
- Priority: FR0350553 20030917
- Main IPC: H01L29/082
- IPC: H01L29/082
Abstract:
A bipolar transistor with very high dynamic performance, usable in an integrated circuit. The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.
Public/Granted literature
- US20070004161A1 Bipolar transistor with high dynamic performances Public/Granted day:2007-01-04
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