发明授权
- 专利标题： Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
- 专利标题（中）： 使用含硅前体和原子氧化学气相沉积高质量流动状二氧化硅
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申请号： US11754440申请日： 2007-05-29
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公开(公告)号： US07825038B2公开(公告)日： 2010-11-02
- 发明人: Nitin K. Ingle , Zheng Yuan , Paul Gee , Kedar Sapre
- 申请人： Nitin K. Ingle , Zheng Yuan , Paul Gee , Kedar Sapre
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Townsend and Townsend and Crew
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.