发明授权
- 专利标题： Nitride semiconductor device
- 专利标题（中）： 氮化物半导体器件
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申请号： US11647218申请日： 2006-12-29
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公开(公告)号： US07825434B2公开(公告)日： 2010-11-02
- 发明人: Hiroaki Ueno , Manabu Yanagihara , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
- 申请人： Hiroaki Ueno , Manabu Yanagihara , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2006-016622 20060125
- 主分类号： H01L29/08
- IPC分类号： H01L29/08
摘要：
A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.
公开/授权文献
- US20070170463A1 Nitride semiconductor device 公开/授权日：2007-07-26
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