发明授权
- 专利标题： MOSFET devices and methods of making
- 专利标题（中）： MOSFET器件及其制造方法
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申请号： US12368498申请日： 2009-02-10
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公开(公告)号： US07829402B2公开(公告)日： 2010-11-09
- 发明人: Kevin Sean Matocha , Stephen Daley Arthur , Ramakrishna Rao , Peter Almern Losee , Zachary Matthew Stum
- 申请人： Kevin Sean Matocha , Stephen Daley Arthur , Ramakrishna Rao , Peter Almern Losee , Zachary Matthew Stum
- 申请人地址： US NY Niskayuna
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： US NY Niskayuna
- 代理商 Scott J. Asmus
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234
摘要：
A MOSFET device and a method for fabricating MOSFET devices are disclosed. The method includes providing a semiconductor device structure including a semiconductor device layer of a first conductivity type, and ion implanting a well structure of a second conductivity type in the semiconductor device layer, where the ion implanting includes providing a dopant concentration profile in a single mask implant sequence.
公开/授权文献
- US20100200931A1 MOSFET DEVICES AND METHODS OF MAKING 公开/授权日：2010-08-12
信息查询
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