A semiconductor device including a MOSFET has a plurality of transistor cell regions disposed on a semiconductor substrate and a Schottky cell region disposed between the plurality of transistor cell regions. Each transistor cell region has a plurality of first trenches disposed in a main surface of the semiconductor substrate, a well region between the plurality of first trenches, a first gate insulating film and a first gate electrode of the MOSFET in each first trench, and a source region of the MOSFET in each well region. The Schottky cell region has a plurality of second trenches disposed in the main surface of the semiconductor substrate, a second gate insulating film and a second gate electrode of the MOSFET in each second trench, gate lead-out wiring connected to each second gate electrode, and a plurality of guard ring regions enclosing the respective second trenches.