发明授权
- 专利标题： Via bottom contact and method of manufacturing same
- 专利标题（中）： 通过底部接触及其制造方法
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申请号： US12431289申请日： 2009-04-28
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公开(公告)号： US07830019B2公开(公告)日： 2010-11-09
- 发明人: Kaushik Chanda , Lawrence A. Clevenger , Andrew P. Cowley , Jason P. Gill , Baozhen Li , Chih-Chao Yang
- 申请人： Kaushik Chanda , Lawrence A. Clevenger , Andrew P. Cowley , Jason P. Gill , Baozhen Li , Chih-Chao Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Richard Kotulak
- 主分类号： H01L23/04
- IPC分类号： H01L23/04
摘要：
A method of fabricating a device includes depositing a electromigration (EM) resistive material in an etched trench formed in a substrate and a wiring layer. The EM resistive material is formed in electrical contact with an underlying diffusion barrier layer and wiring layer. The method further includes forming a via structure in electrical contact with the EM resistive material and the wiring layer. The method results in a structure which prevents an open circuit.
公开/授权文献
- US20090200673A1 VIA BOTTOM CONTACT AND METHOD OF MANUFACTURING SAME 公开/授权日：2009-08-13
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