Invention Grant
- Patent Title: Method for producing a semiconductor substrate
- Patent Title (中): 半导体基板的制造方法
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Application No.: US11877456Application Date: 2007-10-23
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Publication No.: US07833877B2Publication Date: 2010-11-16
- Inventor: Konstantin Bourdelle , Carlos Mazure
- Applicant: Konstantin Bourdelle , Carlos Mazure
- Applicant Address: FR Bernin
- Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: FR0609466 20061027
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
This invention relates to a method for producing a substrate by transferring a layer of a material from a donor substrate to a support substrate, and then by removing a part of the layer of material to form the thin layer. The step of removing a part of the layer of material to form the thin layer comprises forming an amorphous layer in a part of the thin layer, and then recrystallizing the amorphous layer.
Public/Granted literature
- US20080102601A1 METHOD FOR PRODUCING A SEMICONDUCTOR SUBSTRATE Public/Granted day:2008-05-01
Information query
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