发明授权
US07838373B2 Replacement spacers for MOSFET fringe capacitance reduction and processes of making same
有权
用于MOSFET边缘电容降低的替代间隔物及其制造方法
- 专利标题： Replacement spacers for MOSFET fringe capacitance reduction and processes of making same
- 专利标题（中）： 用于MOSFET边缘电容降低的替代间隔物及其制造方法
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申请号： US12220985申请日： 2008-07-30
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公开(公告)号： US07838373B2公开(公告)日： 2010-11-23
- 发明人: Martin Giles , Titash Rakshit , Lucian Shifren , Jack Kavalieros , Willy Rachmady
- 申请人： Martin Giles , Titash Rakshit , Lucian Shifren , Jack Kavalieros , Willy Rachmady
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 John N. Greaves
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A process includes planarizing a microelectronic device that includes a gate stack and adjacent trench contacts. The process also includes removing a gate spacer at the gate stack and replacing the gate spacer with a dielectric that results in a lowered overlap capacitance between the gate stack and an adjacent embedded trench contact.
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