发明授权
- 专利标题： Word line to bit line spacing method and apparatus
- 专利标题（中）： 字线到位线间距法和装置
-
申请号： US12134740申请日： 2008-06-06
-
公开(公告)号： US07838928B2公开(公告)日： 2010-11-23
- 发明人: Werner Graf , Lars Heineck , Martin Popp
- 申请人： Werner Graf , Lars Heineck , Martin Popp
- 申请人地址： DE Munich
- 专利权人： Qimonda AG
- 当前专利权人： Qimonda AG
- 当前专利权人地址： DE Munich
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
In one embodiment, a memory cell includes a bit line arranged in a semiconductor substrate and a bit line contact region arranged adjacent the bit line. A word line is arranged above the bit line contact region in a trench formed in the semiconductor substrate. A generally U-shaped insulating layer is arranged in a bottom region of the trench and separates the bit line and the bit line contact region from the word line.
公开/授权文献
- US20090302380A1 Word Line to Bit Line Spacing Method and Apparatus 公开/授权日：2009-12-10
信息查询
IPC分类:
