发明授权
- 专利标题： Method for forming semiconductor device
- 专利标题（中）： 半导体器件形成方法
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申请号： US11623269申请日： 2007-01-15
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公开(公告)号： US07842571B2公开(公告)日： 2010-11-30
- 发明人: Dong-Hwa Kwak , Jae-Kwan Park , Jae-Hwang Sim , Jin-Ho Kim , Ki-Nam Kim
- 申请人： Dong-Hwa Kwak , Jae-Kwan Park , Jae-Hwang Sim , Jin-Ho Kim , Ki-Nam Kim
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Myers Bigel Sibley & Sajovec, PA
- 优先权： KR10-2006-0101957 20061019
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
In one embodiment a semiconductor device includes odd contacts and respective odd lines. Spacers are formed on sidewalls of the odd lines and even openings for even lines are formed by performing an etching process. Even contacts are formed in the even openings and then even lines are formed.
公开/授权文献
- US20080096377A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 公开/授权日：2008-04-24