发明授权
US07842977B2 Gate electrode structure, MOS field effect transistors and methods of manufacturing the same
有权
栅电极结构，MOS场效应晶体管及其制造方法相同
- 专利标题： Gate electrode structure, MOS field effect transistors and methods of manufacturing the same
- 专利标题（中）： 栅电极结构，MOS场效应晶体管及其制造方法相同
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申请号： US11675460申请日： 2007-02-15
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公开(公告)号： US07842977B2公开(公告)日： 2010-11-30
- 发明人: Stefan Jakschik , Thomas Hecht
- 申请人： Stefan Jakschik , Thomas Hecht
- 申请人地址： DE Munich
- 专利权人： Qimonda AG
- 当前专利权人： Qimonda AG
- 当前专利权人地址： DE Munich
- 代理机构： Edell, Shapiro & Finnan, LLC
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A gate electrode structure comprises at least one bi-layer, wherein each bi-layer comprises a plating film and a stress amplifier film. The plating film includes a poly-crystalline material. The stress amplifier film determines the crystallization result of the poly-crystalline material, wherein a mechanical stress induced through the plating layer is amplified. Tensile or compressive strain may be induced in a crystalline substrate. Electron or hole mobility may be increased and on-resistance characteristics of a MOS field effect transistor may be improved.
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