Invention Grant
- Patent Title: Photopatternable deposition inhibitor containing siloxane
- Patent Title (中): 含有硅氧烷的光图案沉积抑制剂
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Application No.: US11942780Application Date: 2007-11-20
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Publication No.: US07846644B2Publication Date: 2010-12-07
- Inventor: Lyn M. Irving , David H. Levy , Diane C. Freeman , Cheng Yang , Peter J. Cowdery-Corvan
- Applicant: Lyn M. Irving , David H. Levy , Diane C. Freeman , Cheng Yang , Peter J. Cowdery-Corvan
- Applicant Address: US NY Rochester
- Assignee: Eastman Kodak Company
- Current Assignee: Eastman Kodak Company
- Current Assignee Address: US NY Rochester
- Agent Chris P. KonKol; J. Lanny Tucker
- Main IPC: G03F7/26
- IPC: G03F7/26 ; G03F7/075

Abstract:
An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
Public/Granted literature
- US20090130608A1 PHOTOPATTERNABLE DEPOSITION INHIBITOR CONTAINING SILOXANE Public/Granted day:2009-05-21
Information query
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