Invention Grant
- Patent Title: Semiconductor devices including buried bit lines
- Patent Title (中): 半导体器件包括埋地位线
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Application No.: US12791692Application Date: 2010-06-01
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Publication No.: US07846796B2Publication Date: 2010-12-07
- Inventor: Jong-Ho Yun , Byung-Hee Kim , Dae-Yong Kim , Hyun-Su Kim , Eun-Ji Jung , Eun-Ok Lee
- Applicant: Jong-Ho Yun , Byung-Hee Kim , Dae-Yong Kim , Hyun-Su Kim , Eun-Ji Jung , Eun-Ok Lee
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2006-0052073 20060609
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/425 ; H01L21/44

Abstract:
A semiconductor device includes a plurality of channel structures on a semiconductor substrate. A bit line groove having opposing sidewalls is defined between sidewalls of adjacent ones of the plurality of channel structures. A plurality of bit lines are formed on corresponding ones of the opposing sidewalls, and the plurality of bit lines are electrically isolated from each other
Public/Granted literature
- US20100237423A1 SEMICONDUCTOR DEVICES INCLUDING BURIED BIT LINES Public/Granted day:2010-09-23
Information query
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