发明授权
US07847187B2 Photovoltaic cell comprising a photovoltaically active semiconductor material comprising a particular portion of tellurium ions replaced with halogen and nitrogen ions 有权
包括光电活性半导体材料的光伏电池,其包含用卤素和氮离子代替的特定部分的碲离子

Photovoltaic cell comprising a photovoltaically active semiconductor material comprising a particular portion of tellurium ions replaced with halogen and nitrogen ions
摘要:
The invention relates to a photovoltaic cell comprising a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material is a p- or n-doped semiconductor material comprising a binary compound of the formula (I) or a ternary compound of the formula (II): ZnTe  (I) Zn1-xMnxTe  (II) where x is from 0.01 to 0.99, and a particular proportion of tellurium ions in the photovoltaically active semiconductor material has been replaced by halogen ions and nitrogen ions and the halogen ions are selected from the group consisting of fluoride, chloride and bromide and mixtures thereof.
信息查询
0/0