发明授权
- 专利标题： Electron beam exposure mask, electron beam exposure method, and electron beam exposure system
- 专利标题（中）： 电子束曝光掩模，电子束曝光法和电子束曝光系统
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申请号： US11235422申请日： 2005-09-26
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公开(公告)号： US07847272B2公开(公告)日： 2010-12-07
- 发明人: Hiroshi Yasuda , Akio Yamada
- 申请人： Hiroshi Yasuda , Akio Yamada
- 申请人地址： JP Tokyo
- 专利权人： Advantest Corp.
- 当前专利权人： Advantest Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Muramatsu & Associates
- 优先权： JP2004-281321 20040928
- 主分类号： A61N5/00
- IPC分类号： A61N5/00
摘要：
An electron beam exposure system is designed to correct a proximity effect. The electron beam exposure system includes: an electron beam generation unit for generating an electron beam; an electron beam exposure mask having opening portions that are arranged so that sizes of the opening portions change at a predetermined rate in order of arrangement; a mask deflection unit for deflecting the electron beam on the electron beam exposure mask; a substrate deflection unit for deflecting and projecting the electron beam onto a substrate; and a control unit for controlling deflection amounts in the mask deflection unit and the substrate deflection unit. The direction or directions of the change may be any one of a row direction and a column direction or may be the row and column directions.
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