Invention Grant
- Patent Title: Method of controlling process parameters for semiconductor manufacturing apparatus
- Patent Title (中): 控制半导体制造装置的工艺参数的方法
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Application No.: US12052024Application Date: 2008-03-20
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Publication No.: US07848840B2Publication Date: 2010-12-07
- Inventor: Ritchie Dao , Derek Brodie , Scott Olszewski , Duy D Nguyen , Chunlei Zhang
- Applicant: Ritchie Dao , Derek Brodie , Scott Olszewski , Duy D Nguyen , Chunlei Zhang
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Main IPC: G06F19/00
- IPC: G06F19/00 ; G05B13/00 ; G05B11/42 ; G05D23/00

Abstract:
Methods and systems for adaptively controlling process parameters in semiconductor manufacturing equipment. An embodiment provides for gain scheduling of PID controllers across recipe steps. One embodiment provides a method for controlling a chuck temperature during a semiconductor manufacturing process, the method employing a first set of proportional-integral-derivative (PID) values in a PID controller to control the chuck temperature at a first setpoint in a first step of a process recipe and employing a second set of PID values in the PID controller to control the chuck temperature at a second setpoint, different than the first setpoint, in a second step of the process recipe. The methods and systems provide reduced controller response times where process parameter setpoint between steps of a process recipe span a wide range.
Public/Granted literature
- US20090177310A1 METHOD OF CONTROLLING PROCESS PARAMETERS FOR SEMICONDUCTOR MANUFACTURING APPARATUS Public/Granted day:2009-07-09
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