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1.发明授权Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow 有权使用脉冲传热流体流动的等离子体处理装置中的温度控制公开(公告)号：US08916793B2
公开(公告)日：2014-12-23
申请号：US13111334
申请日：2011-05-19
Applicant: Fernando M. Silveira , Hamid Tavassoli , Xiaoping Zhou , Shane C. Nevil , Douglas A. Buchberger , Brad L. Mays , Tina Tsong , Chetan Mahadeswaraswamy , Yashaswini B. Pattar , Duy D. Nguyen , Walter R. Merry
Inventor： Fernando M. Silveira , Hamid Tavassoli , Xiaoping Zhou , Shane C. Nevil , Douglas A. Buchberger , Brad L. Mays , Tina Tsong , Chetan Mahadeswaraswamy , Yashaswini B. Pattar , Duy D. Nguyen , Walter R. Merry
CPC classification number: H01J37/20 , H01J37/32724 , H01J37/32908 , H01J37/32926 , H01J37/32935 , H01J2237/2001 , H05H1/34
Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.
Abstract translation: 通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。 在一个实施例中，温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 在另外的实施例中，耦合到温度受控部件的热储存器和冷储存器中的每一个中的流体水平部分地由耦合两个储存器的被动流平管道保持。 在另一个实施例中，数字传热流体流量控制阀以取决于加热/冷却占空比值的脉冲宽度和具有已经被发现提供良好的温度控制性能的持续时间的配比循环打开。
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2.发明授权Component temperature control by coolant flow control and heater duty cycle control 有权组件温度控制由冷却液流量控制和加热器占空比控制公开(公告)号：US08880227B2
公开(公告)日：2014-11-04
申请号：US13040149
申请日：2011-03-03
Applicant: Chetan Mahadeswaraswamy , Kartik Ramaswamy , Bryan Liao , Sergio Shoji , Duy D. Nguyen , Hamid Noorbakhsh , David Palagashvili
Inventor： Chetan Mahadeswaraswamy , Kartik Ramaswamy , Bryan Liao , Sergio Shoji , Duy D. Nguyen , Hamid Noorbakhsh , David Palagashvili
CPC classification number: G05D23/19 , G05B15/02 , H01J37/32522 , H01J37/32724 , H01J37/32908 , H01J37/3299 , H01L21/67248
Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.
Abstract translation: 用于控制等离子体处理室中的温度的方法和系统，用于广泛的设定点温度和降低的能量消耗。 通过等离子体处理模块控制器实现的控制算法，在冷却液回路和热源之间进行温度控制。 控制算法可以响应于指示实际温度低于设定点温度的反馈信号，完全停止冷却剂液体流向温度控制部件的流动。 控制算法还可以至少部分地基于从等离子体功率导出的前馈控制信号或在处理配方执行期间输入到处理室中的等离子体功率的改变。
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公开(公告)号：US20090297362A1
公开(公告)日：2009-12-03
申请号：US12127230
申请日：2008-05-27
Applicant: Brady Gallwey , Roy Tilford Jackson , Duy D. Nguyen , C. Tom Brannon
Inventor： Brady Gallwey , Roy Tilford Jackson , Duy D. Nguyen , C. Tom Brannon
IPC: F04B49/06
CPC classification number: F04B49/20 , F04B49/065 , F04B2201/0207 , F04B2201/0209 , F04B2203/0202
Abstract: In at least some embodiments, an electrical system for a pump includes a power supply and a controller coupled to the power supply, the controller supporting a plurality of pump cycle levels. If a voltage of the power supply drops below a first threshold, the controller automatically causes the pump to operate at a lower pump cycle level
Abstract translation: 在至少一些实施例中，用于泵的电气系统包括电源和耦合到电源的控制器，所述控制器支持多个泵循环水平。 如果电源的电压低于第一阈值，则控制器自动使泵在较低的泵循环水平下运行
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公开(公告)号：US08404598B2
公开(公告)日：2013-03-26
申请号：US12851606
申请日：2010-08-06
Applicant: Bryan Liao , Katsumasa Kawasaki , Yashaswini Pattar , Sergio Fukuda Shoji , Duy D. Nguyen , Kartik Ramaswamy , Ankur Agarwal , Phillip Stout , Shahid Rauf
Inventor： Bryan Liao , Katsumasa Kawasaki , Yashaswini Pattar , Sergio Fukuda Shoji , Duy D. Nguyen , Kartik Ramaswamy , Ankur Agarwal , Phillip Stout , Shahid Rauf
IPC: H01L21/302
CPC classification number: C23F1/00 , H01J37/32082 , H01J37/32146 , H01J37/32165 , H01L21/31116
Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.
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公开(公告)号：US20110186545A1
公开(公告)日：2011-08-04
申请号：US12905624
申请日：2010-10-15
Applicant: Chetan MAHADESWARASWAMY , Walter R. MERRY , Sergio Fukuda SHOJI , Chunlei ZHANG , Yashaswini B. PATTAR , Duy D. NGUYEN , Tina TSONG , Shane C. NEVIL , Douglas A. BUCHBERGER, JR. , Fernando M. SILVEIRA , Brad L. MAYS , Kartik RAMASWAMY , Hamid NOORBAKHSH
Inventor： Chetan MAHADESWARASWAMY , Walter R. MERRY , Sergio Fukuda SHOJI , Chunlei ZHANG , Yashaswini B. PATTAR , Duy D. NGUYEN , Tina TSONG , Shane C. NEVIL , Douglas A. BUCHBERGER, JR. , Fernando M. SILVEIRA , Brad L. MAYS , Kartik RAMASWAMY , Hamid NOORBAKHSH
CPC classification number: H01J37/32009 , G05B6/02 , H01J37/3244 , H01J37/32715 , H01J37/32935 , H01J2237/334 , H05H1/0081
Abstract: Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.
Abstract translation: 用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。 温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。
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Patent Agency Ranking
6.发明申请AUTOMATED ALGORITHM FOR TUNING OF FEEDFORWARD CONTROL PARAMETERS IN PLASMA PROCESSING SYSTEM 审中-公开用于调整等离子体处理系统中的前馈控制参数的自动算法公开(公告)号：US20140224767A1
公开(公告)日：2014-08-14
申请号：US14179749
申请日：2014-02-13
Applicant: Walter R. MERRY , Sergio Fukuda SHOJI , Yang YANG , Duy D. NGUYEN , Justin PHI
Inventor： Walter R. MERRY , Sergio Fukuda SHOJI , Yang YANG , Duy D. NGUYEN , Justin PHI
CPC classification number: H01J37/3299 , C23C14/54 , C23C16/52
Abstract: Methods and systems for adapting and/or tuning feedforward control parameters in a plasma processing chamber. In embodiments, a dependent process parameter, such as a chamber component temperature, is controlled with a feedforward control algorithm based on one or more independent process parameters, such as RF power. A control algorithm may calculate steady-state deviation of the dependent parameter from a process recipe setpoint, estimate an amount by which an existing control gain coefficient is to be changed to better achieve the setpoint, associate the new control gain coefficient with the particular recipe operation, and store the new control gain coefficient for subsequent execution of the recipe operation. In embodiments, the amount by which a gain coefficient is to be changed is based on a model function derived from a lookup table associating gain coefficients with setpoints of the dependent process parameter and values of the independent process parameter.
Abstract translation: 用于在等离子体处理室中适配和/或调谐前馈控制参数的方法和系统。 在实施例中，使用基于一个或多个独立过程参数（例如RF功率）的前馈控制算法来控制依赖过程参数，例如腔室部件温度。 控制算法可以计算依赖参数与过程配方设定点的稳态偏差，估计要改变现有控制增益系数以更好地实现设定点的量，将新的控制增益系数与特定配方操作相关联 并存储新的控制增益系数用于后续执行配方操作。 在实施例中，增益系数将被改变的量是基于从增益系数与依赖过程参数的设定点和独立过程参数的值相关联的查找表导出的模型函数。
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公开(公告)号：US08602746B2
公开(公告)日：2013-12-10
申请号：US12127230
申请日：2008-05-27
Applicant: Brady Gallwey , Roy Tilford Jackson , Duy D. Nguyen , C. Tom Brannon
Inventor： Brady Gallwey , Roy Tilford Jackson , Duy D. Nguyen , C. Tom Brannon
IPC: F04B49/06
CPC classification number: F04B49/20 , F04B49/065 , F04B2201/0207 , F04B2201/0209 , F04B2203/0202
Abstract: In at least some embodiments, an electrical system for a pump includes a power supply and a controller coupled to the power supply, the controller supporting a plurality of pump cycle levels. If a voltage of the power supply drops below a first threshold, the controller automatically causes the pump to operate at a lower pump cycle level.
Abstract translation: 在至少一些实施例中，用于泵的电气系统包括电源和耦合到电源的控制器，所述控制器支持多个泵循环水平。 如果电源的电压低于第一阈值，则控制器自动使泵在较低的泵循环水平下运行。
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公开(公告)号：US09338871B2
公开(公告)日：2016-05-10
申请号：US12905624
申请日：2010-10-15
Applicant: Chetan Mahadeswaraswamy , Walter R. Merry , Sergio Fukuda Shoji , Chunlei Zhang , Yashaswini B. Pattar , Duy D. Nguyen , Tina Tsong , Shane C. Nevil , Douglas A. Buchberger, Jr. , Fernando M. Silveira , Brad L. Mays , Kartik Ramaswamy , Hamid Noorbakhsh
Inventor： Chetan Mahadeswaraswamy , Walter R. Merry , Sergio Fukuda Shoji , Chunlei Zhang , Yashaswini B. Pattar , Duy D. Nguyen , Tina Tsong , Shane C. Nevil , Douglas A. Buchberger, Jr. , Fernando M. Silveira , Brad L. Mays , Kartik Ramaswamy , Hamid Noorbakhsh
IPC: G01L21/30 , G01R31/00 , H01L21/302 , H01L21/461 , H01L21/306 , C23F1/00 , H05H1/00 , H01J37/32
CPC classification number: H01J37/32009 , G05B6/02 , H01J37/3244 , H01J37/32715 , H01J37/32935 , H01J2237/334 , H05H1/0081
Abstract: Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.
Abstract translation: 用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。 温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。
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9.发明申请TEMPERATURE CONTROL IN PLASMA PROCESSING APPARATUS USING PULSED HEAT TRANSFER FLUID FLOW 有权使用脉冲热传递流体的等离子体处理装置中的温度控制公开(公告)号：US20120132397A1
公开(公告)日：2012-05-31
申请号：US13111334
申请日：2011-05-19
Applicant: Fernando M. Silveira , Hamid Tavassoli , Xiaoping Zhou , Shane C. Nevil , Douglas A. Buchberger , Brad L. Mays , Tina Tsong , Chetan Mahadeswaraswamy , Yashaswini B. Pattar , Duy D. Nguyen , Walter R. Merry
Inventor： Fernando M. Silveira , Hamid Tavassoli , Xiaoping Zhou , Shane C. Nevil , Douglas A. Buchberger , Brad L. Mays , Tina Tsong , Chetan Mahadeswaraswamy , Yashaswini B. Pattar , Duy D. Nguyen , Walter R. Merry
IPC: F28D15/00 , C23C16/52 , B05C13/02 , C23C16/458
CPC classification number: H01J37/20 , H01J37/32724 , H01J37/32908 , H01J37/32926 , H01J37/32935 , H01J2237/2001 , H05H1/34
Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.
Abstract translation: 通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。 在一个实施例中，温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 在另外的实施例中，耦合到温度受控部件的热储存器和冷储存器中的每一个中的流体水平部分地由耦合两个储存器的被动流平管道保持。 在另一个实施例中，数字传热流体流量控制阀以取决于加热/冷却占空比值的脉冲宽度和具有已经被发现提供良好的温度控制性能的持续时间的配比循环打开。
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公开(公告)号：US08182247B2
公开(公告)日：2012-05-22
申请号：US12127216
申请日：2008-05-27
Applicant: Brady Gallwey , Roy Tilford Jackson , Duy D. Nguyen , C. Tom Brannon
Inventor： Brady Gallwey , Roy Tilford Jackson , Duy D. Nguyen , C. Tom Brannon
CPC classification number: F04B9/042 , F04B39/0027
Abstract: In at least some embodiments, a pump includes a turning member and a reciprocating member coupled to the turning member, the reciprocating member performing a pumping motion as the turning member turns. The pump also includes at least one stabilization component in contact with the reciprocating member to stabilize the pumping motion.
Abstract translation: 在至少一些实施例中，泵包括转动构件和联接到转动构件的往复运动构件，往复运动构件随着转动构件转动而执行泵送运动。 泵还包括与往复运动件接触的至少一个稳定部件，以稳定泵送运动。
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