发明授权
US07849423B1 Method of verifying photomask data based on models of etch and lithography processes
有权
基于蚀刻和光刻工艺的模型验证光掩模数据的方法
- 专利标题： Method of verifying photomask data based on models of etch and lithography processes
- 专利标题（中）： 基于蚀刻和光刻工艺的模型验证光掩模数据的方法
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申请号： US11781108申请日： 2007-07-20
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公开(公告)号： US07849423B1公开(公告)日： 2010-12-07
- 发明人: Bayram Yenikaya , Devendra Joshi , Paul A. Fornari , Jesus O. Carrero , Abdurrahman Sezginer
- 申请人： Bayram Yenikaya , Devendra Joshi , Paul A. Fornari , Jesus O. Carrero , Abdurrahman Sezginer
- 申请人地址： US CA San Jose
- 专利权人： Cadence Design Systems, Inc.
- 当前专利权人： Cadence Design Systems, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Sheppard Mullin Richter & Hampton LLP
- 主分类号： G06F17/50
- IPC分类号： G06F17/50 ; G06F9/45
摘要：
A photomask dataset corresponding to a target-pattern is verified by simulating a resist-pattern that will be formed in a resist layer by a lithography process, simulating an etched-pattern that will be etched in a layer by a plasma process wherein said simulation comprises calculating a flux of particles impacting a feature, and determining whether the etched-pattern substantially conforms to the target-pattern.
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