专利检索 ap:("Bayram Yenikaya" OR "Devendra Joshi" OR "Paul A. Fornari" OR "Jesus O. Carrero" OR "Abdurrahman Sezginer") AND inv:"Paul A. Fornari" 第 1 页

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发明授权
Method of verifying photomask data based on models of etch and lithography processes 有权
标题翻译：基于蚀刻和光刻工艺的模型验证光掩模数据的方法

公开(公告)号：US07849423B1

公开(公告)日：2010-12-07

申请号：US11781108

申请日：2007-07-20

申请人： Bayram Yenikaya , Devendra Joshi , Paul A. Fornari , Jesus O. Carrero , Abdurrahman Sezginer

发明人： Bayram Yenikaya , Devendra Joshi , Paul A. Fornari , Jesus O. Carrero , Abdurrahman Sezginer

IPC分类号： G06F17/50 , G06F9/45

CPC分类号： G03F1/36

摘要： A photomask dataset corresponding to a target-pattern is verified by simulating a resist-pattern that will be formed in a resist layer by a lithography process, simulating an etched-pattern that will be etched in a layer by a plasma process wherein said simulation comprises calculating a flux of particles impacting a feature, and determining whether the etched-pattern substantially conforms to the target-pattern.

摘要翻译： 通过模拟通过光刻工艺在抗蚀剂层中形成的抗蚀剂图案来模拟对应于目标图案的光掩模数据集，模拟将通过等离子体工艺在层中蚀刻的蚀刻图案，其中所述模拟包括计算影响特征的颗粒的通量，以及确定蚀刻图案是否基本上符合目标图案。