发明授权
US07851231B2 Method of fabricating field emission array type light emitting unit
有权
场致发射阵列型发光单元的制造方法
- 专利标题: Method of fabricating field emission array type light emitting unit
- 专利标题(中): 场致发射阵列型发光单元的制造方法
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申请号: US11907942申请日: 2007-10-18
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公开(公告)号: US07851231B2公开(公告)日: 2010-12-14
- 发明人: Sun-il Kim , Jun-hee Choi , Byong-gwon Song , Shang-hyeun Park , Ho-suk Kang , Deuk-seok Chung , Chan-wook Baik
- 申请人: Sun-il Kim , Jun-hee Choi , Byong-gwon Song , Shang-hyeun Park , Ho-suk Kang , Deuk-seok Chung , Chan-wook Baik
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Cantor Colburn LLP
- 优先权: KR10-2006-0107485 20061101
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method of fabricating a field emission array type light emitting unit that includes a rear substrate including a plurality of cathodes and a plurality of carbon nanotube emitters on a front side, a front substrate including a plurality of anodes and a phosphor layer on a rear side, wherein the rear substrate and the front substrate are arranged at a distance apart from each other and a plurality of spacers are arranged between the rear substrate and the front substrate, the plurality of spacers being adapted to maintain constant the distance, the method includes producing a diffusion pattern by wet etching a front side of the front substrate.
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